Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Lg Semicon Co., Ltd.

Skhynix Inc.

Hynix Semicodnuctor Inc.

Hynix Corporation

Hynix Demiconductor Inc.

Hee Bok Kang

Suk Kyoung Hong

Jin Hong Ahn

Hun Woo Kye

Je Hoon Park

Duck Ju Kim

Jin Hong An

Geun Il Lee

Jung Hwan Kim

Chang Shuk Kim

Jae Hyoung Lim

Dong Yun Jeong

Jae Jin Lee

Young Jin Park

In Woo Jang

Kye Nam Lee

Seaung Suk Lee

Doo Young Yang

Jun Sik Lee

Jin Gu Kim

Sung Joo Hong

Geun Ii Lee

Sun Ghil Lee

Young Wug Kim

Ji Mook Kim

Christine H Kyung

A wafer and a method for forming the same are disclosed. The wafer forming method can separate respective chips from others by performing a Deep Reactive Ion Etching (DRIE) process on a wafer including a plurality of chips. The wafer includes a plurality of chips configured to be arranged in row and column directions on the wafer, a scribe line configured to be formed among the plurality of chips so as to separate each chip, and an align key line configured to be formed in one side of the wafer so as to form an align key pattern.

Wafer and method for forming the same

A semiconductor memory device is disclosed, which relates to a technology for a serial cell structure of a phase change memory (PCM). The semiconductor memory device includes a plurality of unit cells stacked with a plurality of layers, and a single bit line formed to have a vertical structure and shared by the plurality of unit cells. Each unit cell includes a switching element including a source region, a drain region, and a channel region, and a phase change resistor (PCR) element formed over the switching element.

Semiconductor memory device

An RFID device includes an amplification unit, a demodulator, and a modulator. The amplification unit is configured to amplify a level of a radio signal applied through an antenna, and output an amplification signal. The demodulator is configured to generate an operating voltage by rectifying and amplifying the amplification signal, demodulate the operating voltage, and generate a command signal. The modulator is configured to output a response signal, which corresponds to the command signal, to the antenna.

RFID device

An integrated circuit and a manufacturing method thereof are provided. A chip size can be reduced by forming a memory device in which a ferroelectric capacitor region is laminated on a DRAM. The integrated circuit includes a cell array region having a capacitor, a peripheral circuit region, and a ferroelectric capacitor region being formed on an upper layer of the cell array region and the peripheral circuit region, and having a ferroelectric capacitor device.

Integrated circuit and manufacturing method thereof

A nonvolatile memory device and a method for controlling the same are provided relating to a flash memory device. The nonvolatile memory device includes a page buffer configured to store program bits, an incremental step pulse program (ISPP) control unit configured to count the program bits stored in the page buffer and control ISPP levels differently depending on change of the program bits, and an ISPP driving unit configured to drive an ISPP voltage in response to an output signal of the ISPP control unit.

Nonvolatile memory device and method for controlling the same

A semiconductor memory device includes a read/write bit line configured to supply a cell driving voltage. A selecting unit is connected to the read/write bit line and is controlled by a word line. A plurality of cells are connected between the selecting unit and a source line, and the cells are configured to read and write data according to a cell driving voltage. Each switching element of a plurality of switching elements are connected in parallel with a single cell of the plurality of cells, and the plurality of switching elements are controlled selectively by a plurality of bit lines.

Semiconductor memory device for writing data to multiple cells simultaneously and refresh method thereof

A non-volatile memory device and a method for forming the same are disclosed, which relate to a ferroelectric memory device having non-volatile characteristics. The non-volatile memory device includes a control gate configured to receive a read voltage, an insulation film formed over the control gate, a metal layer formed over the insulation film, configured to include a channel region, and a drain region and source region at both ends of the channel region, a ferroelectric layer formed over the channel region of the metal layer, and a program and read gate formed over the ferroelectric layer. A write operation of data corresponding to a resistance state of the channel region is performed by changing polarity of the ferroelectric layer in response to a voltage applied to the program and read gate, the drain and source regions, and the control gate. A read operation of data is performed by sensing a current value changing with a polarity state of the ferroelectric layer on the condition that the read voltage is input to the control gate and a sensing bias voltage is input to one of the drain region and the source region.

Non-volatile memory device and sensing method for forming the same

A nonvolatile ferroelectric perpendicular electrode cell comprises a ferroelectric capacitor and a serial PN diode switch. The ferroelectric capacitor includes a word line perpendicular electrode as a first electrode and a storage perpendicular electrode as a second electrode apart at a predetermined interval from the word line perpendicular electrode to have a column type, where a ferroelectric material is filled in a space where the first electrode are separated from the second electrode. The serial PN diode switch, which is connected between a bit line and the ferroelectric capacitor, selectively switches a current direction between the bit line and the ferroelectric capacitor depending on voltage change between the bit line and the ferroelectric capacitor.

Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell

An antenna for use in an RFID device is disclosed. The antenna of the RFID device includes an antenna substrate including a cavity in which an RFID chip is inserted, and also includes a first antenna electrode and a second antenna electrode. The first and second antenna electrodes are formed on the antenna substrate so as to connect to the RFID chip, and are tilted at specific slopes while interposing the cavity therebetween. The antenna is connected to the RFID chip using a simple insertion method, so that connection speed is increased.

Antenna for use in radio frequency identification (RFID) device

A radio frequency identification (RFID) device includes: a first amplifier configured to amplify a level of a first radio signal applied through a first antenna, and output an amplified signal; a second amplifier configured to amplify the amplified signal to a predetermined level, and output a power signal; a demodulator configured to demodulate the amplified signal and generate a command signal; a transmission switch configured to selectively output the power signal according to a response signal corresponding to the command signal; and a modulator configured to output a second radio signal, which is generated by modulating the power signal, to a second antenna.

A RFID device having an analog block, a digital block, and a memory block having a nonvolatile ferroelectric memory is presented. The analog block is configured to receive a radio frequency signal so as to output an operating command signal. The digital block is configured to generate and output an address and an operation adjusting signal in response to the operating command signal. The digital block is also configured to output a response signal to the analog block and to generate a flag data corresponding to a data processing state and value. The memory block is configured to read and write a data in a nonvolatile ferroelectric capacitor in response to the operation adjusting signal. The memory block includes a memory unit configured to store the flag data so as to output the flag data to the digital block.

Radio frequency identification device having nonvolatile ferroelectric memory

A phase change memory device having an improved performance that minimizes cell degradation is presented. The phase change memory device includes: a cell array, a sense amplifier, a write driving unit, and a reference level selecting unit. The cell array has a phase change resistor is configured to read/write data. The sense amplifier is configured to compare a reference voltage with a sensing voltage received from the cell array. The write driving unit is configured to supply a driving voltage corresponding to write data to the cell array. The reference level selecting unit is configured to select a read reference voltage in a read mode so as to output the reference voltage, and to select a reference voltage corresponding to input data in a write verifying mode so as to output the reference voltage.

Phase change memory device with improved performance that minimizes cell degradation

The LED package comprising a substrate and a display device, stacked on the substrate, including a light emitting diode (LED), and so on. A light emitting diode (LED) package comprises a LED device configured to emit light, an electrostatic discharge (ESD) device including an ESD circuit formed under the LED device, a printed circuit board (PCB), including a power supply line, formed under the ESD device, and a heat sink substrate, formed under the PCB, configured to release a heat delivered from the LED device through the ESD device and PCB.

LED package and RFID system including the same

A RFID device having a nonvolatile ferroelectric memory includes an analog block. A power-on reset unit configured to sense a power voltage and output a power sensing signal is included in the analog block. A radio frequency signal sensing unit is configured to sense the level of a detecting signal corresponding to a radio frequency signal received by the antenna of the RFID device and outputs a radio frequency sensing signal. A power-on reset mixer is configured to synthesize the power sensing signal and the radio frequency sensing signal and outputs a power-on reset signal according to the voltage levels of the power sensing signal and the radio frequency sensing signal.

A dual antenna RFID tag which can perform both Near Field (NF) communication and Far Field (FF) communication using a single RF tag is presented. The RFID tag includes an antenna unit and a voltage rectification unit. The antenna unit can perform communications in either or both a first and a second bandwidth. The voltage rectification unit can rectify and boost one or more radio signals received through the antenna unit and generate one or more power voltage impulses corresponding to the radio signals respectively.

Growing community of inventors

Daejeon Metropolitan, South Korea

Hee Bok Kang