Centre National De La Recherche Scientifique

Hedi Hakim

Jean-Louis Sanchez

Jean Jalade

Jean-Pierre Laur

Patrick Austin

Marie Breil

The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones ( ) separated by recesses ( ) formed in a type N semiconductor substrate ( ). The walls of the raised zones and the base of the recesses are coated with a conductive layer ( ). The substrate is connected to a first terminal (A) of the capacitor and the conductive layer to a second terminal (B) of the capacitor. At least the base of the recesses or the side of the raised zones comprises type P regions ( ), the pitch of the raised parts being selected so that the space charging zones linked to the type P regions are joined when the voltage difference between said terminals exceeds a predetermined threshold. The zones not comprising type P regions are coated with an insulant ( ) and a highly doped N region ( ) is formed beneath the insulant.

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Merkezchihya, Tunisia

Hedi Hakim