Intel Corporation

Hector M Saavedra Garcia

Walid M Hafez

Rahul Ramaswamy

Sumit Ashtekar

A device structure includes a first gate on a first fin, a second gate on a second fin, where the second gate is spaced apart from the first gate by a distance. A fuse spans the distance and is in contact with the first gate and the second gate. A first dielectric is between the first fin and the second fin, where the first dielectric is in contact with, and below, the fuse and a second dielectric is between the first gate and the second gate, where the second dielectric is on the fuse.

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Portland, OR, United States of America

Hector M Saavedra Garcia