Samsung Electronics Co., Ltd.

Heayun Lee

Hansoo Kim

Jin-Soo Lim

Vladimir Urazaev

Jin Ha Jeong

A three dimensional semiconductor memory device includes an electrode structure having a plurality of conductive electrode patterns and insulating patterns alternatingly stacked on a substrate. Opposite sidewalls of the electrode structure include respective grooves therein extending in a direction substantially perpendicular to the substrate. First and second active patterns protrude from the substrate and extend within the grooves in the opposite sidewalls of the electrode structure, respectively. Respective data storing layers extend in the grooves between the conductive electrode patterns of the electrode structure and sidewalls of the first and second active patterns adjacent thereto. Related fabrication methods are also discussed.

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Suwon-si, South Korea

Heayun Lee