Air Products and Chemicals, Inc.

Versum Materials US, LLC

Heather Regina Bowen

Xinjian Lei

Manchao Xiao

Mark Leonard O'Neill

Ronald Martin Pearlstein

Haripin Chandra

Steven Gerard Mayorga

Bing Han

Anupama Mallikarjunan

David A Roberts

Thomas R Gaffney

Jianheng Li

Andrew David Johnson

Hansong Cheng

Liu Yang

Kirk Scott Cuthill

Hareesh Thridandam

Kelly Ann Chandler

Lee Arthur Senecal

Agnes Derecskei-Kovacs

Thomas Richard Gaffney

Xiao Manchao

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein Ris selected from linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, electron withdrawing group, and Cto Caryl group; Ris selected from hydrogen, linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, Cto Caryl group, linear or branched Cto Cfluorinated alkyl group, electron withdrawing group, and Cto Caryl group; optionally wherein Rand Rare linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Organoaminodisilane precursors and methods for depositing films comprising same

Methods for forming non-oxygen containing silicon-based films, that contain &#x3e;50 atomic % of silicon, are provided herein. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiHgroups with at least one Clinkage between silicon atoms such as 1,4-disilabutane.

Methods of forming non-oxygen containing silicon-based films

Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I:XRHSi(NRR)&#x2003;&#x2003;Iwherein X is selected from Cl, Br, I; Ris selected from linear or branched C-Calkyl group, a C-Calkenyl group, a C-Calkynyl group, a C-Ccyclic alkyl, and a C-Caryl group; Ris selected from a linear or branched C-Calkyl, a C-Calkenyl group, a C-Calkynyl group, a C-Ccyclic alkyl group, and a C-Caryl group; Ris selected from a branched C-Calkyl group, a C-Calkenyl group, a C-Calkynyl group, a C-Ccyclic alkyl group, and a C-Caryl group; m is 1 or 2; n is 0, 1, or 2; p is 0, 1 or 2; and m+n+p is less than 4, wherein Rand Rare linked or not linked to form a ring.

Halogenated organoaminosilane precursors and methods for depositing films comprising same

A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C-Clinear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C-Caromatic group with or without substituents, a C-Cheterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, Ris selected from a C-Clinear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C-Caromatic group with or without substituents, a C-Cheterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and Rin formula A can be combined into a cyclic group and Rrepresenting a single bond, (CH), chain, a ring, C-Cbranched alkyl, SiR, or SiH.

Process for producing silicon and oxide films from organoaminosilane precursors

Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein Ris independently selected from hydrogen, a linear or branched Cto Calkyl, a linear or branched Cto Calkenyl, a linear or branched Cto Calkynyl, a Cto Calkoxy, a Cto Cdialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and Ris independently selected from hydrogen, a linear or branched Cto Calkyl, a linear or branched Cto Calkenyl, a linear or branched Cto Calkynyl, a Cto Calkoxy, a Cto Cdialkylamino, a Cto Caryl, a linear or branched Cto Cfluorinated alkyl, and a Cto Ccyclic alkyl group.

Organoaminosilane precursors and methods for depositing films comprising same

A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C-Clinear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C-Caromatic group with or without substituents, a C-Cheterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, Ris selected from a C-Clinear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C-Caromatic group with or without substituents, a C-Cheterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and Rin formula A can be combined into a cyclic group and Rrepresenting a single bond, (CH)chain, a ring, C-Cbranched alkyl, SiR, or SiH.

Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:

Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes

A method of removing trace levels of arsenic-containing impurities from raw triethylphosphate (TEPO) is disclosed. The method uses adsorption, or adsorption followed by a flash distillation. The method comprises contacting raw triethylphosphate (TEPO) with an adsorbent which selectively adsorbs the arsenic-containing impurities in the raw triethylphosphate (TEPO). The adsorbent is a base promoted alumina containing adsorbent represented by a formula: ZWwhere x is the weight percentage of Z in the adsorbent ranging from 30% to 99.999%; y is the weight percentage of W in the adsorbent, and x+y=100%; Z is selected from the group consisting of alumina (AlO), magnesium-alumina based layered double hydroxide (MgO&#x2014;AlO), alumina-zeolite, and mixtures thereof; and W is selected from the group consisting of at least one basic metal oxide, at least one basic metal carbonate, and mixtures thereof. The method will result in a final triethylphosphate (TEPO) with a few ppb to less than 1 ppb arsenic containing impurities.

Removal of trace arsenic impurities from triethylphosphate (TEPO)

A process for purifying monoterpenes, including the steps of: providing a monoterpene comprising alpha terpinene of about% or greater purity and comprising an oxygen-containing impurity compound selected from the group consisting of-cineole,-cineole, and mixtures thereof; providing an activated silica gel preparative chromatographic column; contacting the monoterpene with the column, wherein the oxygen-containing impurity compounds are retained on the column; recovering monterpenes depleted of oxygen-containing impurity compounds from the column by applying a pressure above atmospheric from a gas source without the use of a solvent; and removing the oxygen-containing impurity compounds by contacting the column with an alcohol.

Selective purification of mono-terpenes for removal of oxygen containing species

A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si&#x2014;Hfragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more HSi&#x2014;NR(R&#x2550;SiH, R, Ror R, defined below) groups selected from the group consisting of one or more of: wherein R and Rin the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and Rin formula A also being combinable into a cyclic group, and Rrepresenting a single bond, (CH), a ring, or SiH, and purging away the unreacted silicon-containing source.

Cyclic chemical vapor deposition of metal-silicon containing films

A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si&#x2014;H or N&#x2014;H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si&#x2014;H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.

Stabilization of nitrogen-containing and oxygen-containing organosilanes using weakly basic ion-exchange resins

This invention relates to an improved process for removing trace levels of Group IVb contaminants from a Group IVb metal tetrahalide of and particularly to a process for removing zirconium tetrachloride from titanium tetrachloride. The improvement resides in contacting a titanium tetrachloride feedstock containing trace impurities of zirconium tetrachloride or hafnium tetrachloride with a sufficient amount of titanium hydride to convert any zirconium tetrachloride or hafnium tetrachloride to a lower volatile compound. The resultant mixture is distilled and the titanium tetrachloride separated from the lower volatile zirconium or hafnium compounds.

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Vista, CA, United States of America

Heather Regina Bowen