National Semiconductor Corporation

Heather McCulloh

Henry G Prosack, Jr

Jiankang Bu

Douglas Brisbin

Sergei Drizlikh

David Courtney Parker

Denis Finbarr O'Connell

Prasad Chaparala

Steven J Adler

Patrick McCarthy

An insulating material interposed between two conductive materials can experience plasma process induced damage (PPID) when a plasma process is used to deposit a dielectric onto one of the conductive materials. This PPID can be reduced by reducing electric charge accumulation on the one conductive material during the plasma process dielectric deposition.

Method and apparatus for reducing plasma process induced damage in integrated circuits

A system and method is disclosed for improving complementary metal oxide semiconductor (CMOS) compatible non volatile memory (NVM) retention reliability in memory cells. A memory cell of the invention comprises a backend layer that reduces charge leakage from a floating gate of the memory cell. A first bottom portion of the backend layer is formed from a first layer of silicon oxynitride having a low value of defect/trap density. A second top portion of the backend layer is formed from a second layer of silicon oxynitride having a high value of defect/trap density. The first layer of silicon oxynitride inhibits electron transport and the second layer of silicon oxynitride protects CMOS devices from plasma induced damage.

System and method for improving CMOS compatible non volatile memory retention reliability

An electronic apparatus is disclosed that comprises a silicon nitride material that has an increased silicon content. The silicon nitride material is manufactured by exposing plasma enhanced chemical vapor deposition (PECVD) silicon nitride to an increased flow of silane while the PECVD silicon nitride is being deposited. The material has anti-reflective coating (ARC) properties and can also be used as a hard mask. When the material is covered with cobalt the material forms conductive cobalt silicide when the cobalt is annealed. A method for siliciding the PECVD silicon nitride is also disclosed.

System and method for using siliciding PECVD silicon nitride as a dielectric anti-reflective coating and hard mask

A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiHat a first flow rate, and the second SiON layer is formed with SiHat a second higher flow rate.

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Kennebunk, ME, United States of America

Heather McCulloh