Samsung Electronics Co., Ltd.

Hea-Yun Lee

Jin-Ha Jeong

Jin Hyeock Choi

Urazaev Vladimir

Jin Hwan Choi

Vladimir Urazaev

A method of forming a reticle includes: loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first pattern aperture and a second pattern aperture so that the first pattern aperture is directly overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after the electron beam passes the first pattern aperture, to form a first exposure pattern; moving the second aperture plate so that the second pattern aperture is directly overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after the electron beam passes the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having first and second patterns.

Exposure apparatus for forming a reticle

A method including loading a blank reticle; projecting an electron beam; moving a second aperture plate having a first and second pattern aperture so the first pattern aperture is overlapped by a first aperture of a first aperture plate, the electron beam passing through the first pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam that passes the first pattern aperture to form a first exposure pattern; moving the second aperture plate so the second pattern aperture is overlapped by the first aperture of the first aperture plate, the electron beam passing through the second pattern aperture after passing the first aperture; exposing the blank reticle with the electron beam after passing the second pattern aperture, to form a second exposure pattern; and developing the blank reticle having the first and second exposure patterns to form the reticle having first and second patterns.

Exposure apparatus for forming a reticle and method of forming a reticle using the same

In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.

Methods of forming a photolithography reticle

Exposure systems include a beam generator, which is configured to irradiate source beams in a direction of an object to be exposed by the source beams, along with first and second beam shapers. The first beam shaper, which is disposed proximate the beam generator, has a first aperture therein positioned to pass through the source beams received from the beam generator. The second beam shaper is disposed proximate the first beam shaper. The second beam shaper includes a plate having a second aperture therein, which is positioned to receive the source beams that are passed through the first aperture of the first beam shaper. The second beam shaper further includes a first actuator and a first shift screen mechanically coupled to the first actuator.

Growing community of inventors

Suwon-si, South Korea

Hea-Yun Lee