Samsung Sdi Co., Inc.

Cheil Industries Inc.

Hea-Jung Kim

Yun-Jun Kim

Hyun-Ji Song

Chung-Heon Lee

Yoo-Jeong Choi

Yong-Woon Yoon

Joon-Young Moon

Youn-Hee Nam

You-Jung Park

Young-Min Kim

Sung-Hwan Kim

Youn-Jin Cho

Seung-Hee Hong

Seung-Wook Shin

Yo-Choul Park

Go-Un Kim

Yu-Shin Park

Min-Soo Kim

Sung-Min Kim

Mi-young Kim

Sang-Kyun Kim

Chul-Ho Lee

Sung-Jae Lee

Hyo-Young Kwon

Seulgi Jeong

Songse Yi

Byeri Yoon

Sun-Hae Kang

Jae-Yeol Baek

Naery Yu

Yeon-Hee Jo

Sun-Min Hwang

Won-Jong Hwang

MyeongKoo Kim

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.

Method of producing layer structure, layer structure, and method of forming patterns

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.*-A-B&#x2014;*&#x2003;&#x2003;[Chemical Formula 1] In the Chemical Formula 1, A and B are the same as defined in the detailed description.

Hardmask composition and method of forming patterns using the hardmask composition

A monomer for a hardmask composition, a hardmask composition, and a method of forming patterns, the monomer being represented by the following Chemical Formula 1: 

Monomer for hardmask composition, hardmask composition including the monomer, and method of forming patterns using the hardmask composition

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the same. In the above Chemical Formula 1, A, A', L, L&#x2032;, X and n are the same as defined in the specification.

Monomer for hardmask composition, hardmask composition including said monomer, and method for forming pattern using said hardmask composition

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.  In the Chemical Formula 1,

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.  In the above Chemical Formula 1, Ato A, Xto X, L, L, n and m are the same as described in the detailed description.

Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition

Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same.

Monomer, hard mask composition comprising said monomer, and method for forming pattern using said hard mask composition

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent. In the above Chemical Formula 1, A and B are as defined in the specification.

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Suwon-si, South Korea

Hea-Jung Kim