USA As Represented by Secretary of the Navy

Hayden Morris

Richard F Bis

Charles L Christianson

Henry W Rhodes

Margaret C Marlow

A superior hermetic seal for ceramic modules is presented. The case base ber is provided with metallization around the periphery of the cavity. The case cover is provided with metallization not only to mate with the metallization of the base, but the cover metallization extends onto the thickness edge. The dimensions of the cover are less than the corresponding metallization dimensions of the base member. In this manner the solder bead formed about the periphery will wet the exposed metallization surfaces and form a visually inspectable bead.

Metallization for hermetic sealing of ceramic modules

An improved particle detection tube including a method for applying a radion transparent electrically non-conductive, opaque to ultraviolet light coating to the mica window of the tube. The coating reduces erroneous counts by preventing arcing between the tube anode and window. A purified mineral bituminous hydrocarbon based wax coating is applied to the mica window by cleaning the window with a hydrocarbon or chlorinated solvent rinsing with isopropyl alcohol drying the window dissolving 4 to 20 milligrams of purified bituminous hydrocarbon based wax in 1 to 2 milliliters of a hydrocarbon or chlorinated solvent on the window, and rotating the tube until the solvent evaporates to produce a film of the wax thereon.

Radiation detector and method of opaquing the mica window

A controlled environment process for making diode arrays by depositing the sublimate of a semiconductor material through an aperture of a mask placed nearby a substrate and then subjecting part of the sublimate to ion implantation. The aperture causes diffraction of the sublimate vapor stream, while the proximity of the edges of the aperature to the substrate causes the central plateau of the deposited thin-film to have a rounded rim leading to sides that taper smoothly in thickness to the substrate. Ion implantation to a controlled depth creates an isolated planar junction. Surface layers of a gold electrode running onto the substrate from different surface areas of the thin-film provide for off-mesa bonding of electrical leads.

Process for preparing isolated junctions in thin-film semiconductors

A controlled environment process for making diode arrays by depositing the sublimate of a semiconductor material through an aperture of a mask placed nearby a substrate and then subjecting part of the sublimate to ion implantation. The aperture causes diffraction of the sublimate vapor stream while the proximity of the edges of the aperture to the substrate causes the central plateau of the deposited thin-film to have a rounded rim leading to sides that taper smoothly in thickness to the substrate. Ion implantation to a controlled depth creates an isolated planar junction. Surface layers of a gold electrode running onto the substrate from different surface areas of the thin-film provide for off-mesa bonding of electrical leads.

Growing community of inventors

Washington, DC, United States of America

Hayden Morris