Honda Motor Co., Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hayato Watanabe

Masahito Mori

Takao Arase

Jun Iida

Taku Iwase

Satoshi Kozuka

Nobukazu Asano

Takeshi Shimada

Takeshi Shima

Naoyuki Tanaka

Hiroaki Ishimura

Satoshi Terakura

Toru Ito

Yusuke Nagamitsu

Akito Kouchi

Bumpei Nakayama

A control apparatus, for an internal combustion engine, detects a rotational speed parameter (time parameter) that represents a rotational speed of the internal combustion engine including a plurality of cylinders, detects a single misfire that is a misfire for every ignition for each of the plurality of cylinders, based on the rotational speed parameter that has been detected in each combustion stroke of the plurality of cylinders (stepstoand), counts, as a misfire counter value, the number of times that the single misfire has been detected for each of the plurality of cylinders (stepsand), determines whether the misfire is occurring in the cylinder, based on the misfire counter value (stepsto), and corrects an ignition timing of the cylinder that has been determined that the misfire is occurring to an advance angle side (steps, and).

Control apparatus for internal combustion engine

A misfire determination device, for an internal combustion engine, according to the present invention detects a combustion state parameter of the internal combustion engine, retrieves an extreme value of the combustion state parameter in an extreme value retrieval section from a start timing of a combustion stroke to a predetermined crank angle (step 5), upon retrieval of the extreme value, sets a predetermined crank angle section subsequent to a crank angle corresponding to the extreme value as a misfire determination parameter calculation section (step 6, expression 5), calculates a misfire determination parameter based on the combustion state parameter that has been detected in the misfire determination parameter calculation section (step 6), and determines a misfire based on the misfire determination parameter (steps 7 to 9).

Misfire determination device for internal combustion engine

In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

Plasma processing apparatus and plasma processing method

There is provided a plasma processing method for forming shallow trench isolation (STI) on a silicon substrate, the plasma processing method including: a trench forming step of forming a trench in the silicon substrate by using plasma generated by pulse-modulated radio frequency power; and an oxidation step of oxidizing the silicon substrate by using only oxygen gas which is performed after the trench forming step, in which the trench forming step and the oxidizing step are repeated a plurality of times.

Plasma processing method

A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.

Growing community of inventors

Tokyo, Japan

Hayato Watanabe