Tokyo Electron Limited

Hayato Tanoue

Hirotoshi Mori

Yohei Yamashita

Yoshihiro Kawaguchi

Kazuya Hisano

Yohei Yamawaki

Yasutaka Mizomoto

Suguru Enokida

Seiji Nakano

Munehisa Kodama

Takashi Uno

Satoshi Ookawa

A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers; and a controller. The controller controls an operation of forming the internal modification layers such that the internal modification layers are formed in a spiral shape from a diametrically outer side of the processing target object toward a diametrically inner side thereof, and such that an eccentric amount between the holder and the processing target object held by the holder in the forming of the internal modification layers toward the diametrically inner side of the processing target object becomes smaller than the eccentric amount in forming the internal modification layers toward the diametrically outer side of the processing target object.

Processing apparatus and processing method

A substrate processing method of a combined substrate in which a first substrate having a surface film stacked thereon and a second substrate are bonded to each other includes separating the first substrate as a removing target from the second substrate; and removing or modifying at least a surface layer of the surface film at a peripheral portion of the second substrate by radiating laser light to an exposed surface of the surface film remaining at the peripheral portion of the second substrate, the exposed surface being exposed as a result of the separating of the first substrate.

Bonded substrate peripheral laser processing method and substrate processing apparatus thereof

A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, the second substrate; a periphery modification unit configured to form a peripheral modification layer by radiating laser light for periphery to an inside of the first substrate held by the substrate holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof; and an internal modification unit configured to form, after the peripheral modification layer is formed by the periphery modification unit, an internal modification layer by radiating laser light for internal surface to the inside of the first substrate held by the substrate holder along a plane direction of the first substrate.

Substrate processing apparatus and substrate processing method

A substrate processing system includes: a modification layer forming device configured to form a modification layer within a first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate; an interface processing device configured to process an interface where the first substrate and a second substrate are bonded in the peripheral portion; a periphery removing device configured to remove the peripheral portion starting from the modification layer; a position detection device configured to detect a position of the modification layer or a position of the interface; and a control device configured to control the modification layer forming device and the interface processing device. The control device controls the position of the interface based on the detected position of the modification layer, or controls the position of the modification layer based on the detected position of the interface.

Substrate processing system and substrate processing method

A substrate processing method of transcribing, in a combined substrate in which a first substrate and a second substrate are bonded to each other, a device layer formed on a surface of the second substrate to the first substrate is provided. A laser beam is radiated in a pulse shape from a rear surface side of the second substrate to a laser absorption layer formed between the second substrate and the device layer.

Substrate laser processing method and substrate laser processing apparatus

A processing apparatus configured to process a processing target object includes a modifying device configured to radiate laser light to an inside of the processing target object to form multiple modification layers along a plane direction of the processing target object; and a controller configured to control an operation of the modifying device at least. The controller controls the modifying device to form: a peripheral modification layer which serves as a starting point where a peripheral portion of the processing target object as a removing target is detached; a first internal modification layer in a ring shape to be concentric with the peripheral modification layer at a diametrically inner side than the peripheral modification layer; and a second internal modification layer in a spiral shape at a diametrically inner side than the first internal modification layer.

A substrate processing system configured to process a substrate includes a first modifying apparatus configured to form, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, an internal modification layer elongated within the first substrate in a plane direction from a center of the first substrate toward at least an edge portion of the first substrate as a removing target; a second modifying apparatus configured to form, within the first substrate, an edge modification layer elongated in a thickness direction of the first substrate along a boundary between the edge portion and a central portion of the first substrate; and a separating apparatus configured to separate a portion of the first substrate at a rear surface side, starting from the internal modification layer.

A laser processing device includes a height measurement unit configured to measure a vertical direction position of an irradiation point of a processing laser beam on an upper surface of a substrate; and a controller configured to control a vertical direction position of a light condensing unit based on the vertical direction position of the irradiation point while moving the irradiation point along multiple dividing target lines. The height measurement unit includes a coaxial laser displacement meter and a separate-axis laser displacement meter. The controller controls the vertical direction position of the light condensing unit by using only one of the coaxial or the separate-axis laser displacement meter for each of the multiple dividing target lines while the substrate is processed and performs a switchover of a laser displacement meter for controlling the vertical direction position of the light condensing unit between the coaxial and the separate-axis laser displacement meters.

Laser processing device, laser processing system and laser processing method

A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

Substrate processing method and substrate processing system

A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; a periphery removing unit configured to remove, starting from a periphery modification layer formed on the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, the peripheral portion from the combined substrate held by the substrate holder; and a collection unit equipped with a collection mechanism configured to collect the peripheral portion removed by the periphery removing unit.

A substrate processing apparatus includes a holder configured to hold a combined substrate in which a first substrate and a second substrate are bonded to each other; a first detector configured to detect an outer end portion of the first substrate; a second detector configured to detect a boundary between a bonding region where the first substrate and the second substrate are bonded and a non-bonding region located at an outside of the bonding region; a periphery removing device configured to remove a peripheral portion of the first substrate as a removing target from the combined substrate held by the holder.

A substrate processing apparatus includes a holder configured to hold a combined substrate; a peripheral modifying device configured to form a peripheral modification layer to an inside of a first substrate along a boundary between a peripheral portion and a central portion; an internal modifying device configured to form an internal modification layer to the inside of the first substrate along a plane direction; a holder moving mechanism configured to move the holder in a horizontal direction. The peripheral modifying device radiates laser light for periphery to the inside of the first substrate while moving the holder to perform eccentricity correction. The internal modifying device radiates laser light for internal surface without performing the eccentricity correction at least at a center portion of the inside of the first substrate.

A processing apparatus includes a controller configured to control an operation of forming condensing points in a processing target object. In forming the condensing points by radiating a laser light to an inside of the processing target object periodically from a modifying device while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and, also, by moving the modifying device in a diametrical direction relative to the holder by a moving mechanism, the controller controls a number and an arrangement of the condensing points, which are simultaneously formed at different positions in a plane direction of the processing target object, based on a relative rotation number of the processing target object and a radiation pitch of the laser light.

A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a holder moving mechanism configured to move the holder in a horizontal direction; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers in a spiral shape; a modifying device moving mechanism configured to move the modifying device in the horizontal direction; and a controller configured to control an operation of forming the internal modification layers. The controller controls operations of the holder and the modifying device such that a spiral processing movement according to the formation of the internal modification layers and an eccentricity follow-up movement of correcting an eccentric amount between the holder and the processing target object held by the holder are shared by the holder and the modifying device.

A substrate processing system configured to process a substrate includes a modification layer forming apparatus configured to form a modification layer within the substrate along a boundary between a peripheral portion of the substrate to be removed and a central portion of the substrate; and a periphery removing apparatus configured to remove the peripheral portion starting from the modification layer.

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Kumamoto, Japan

Hayato Tanoue