Genesis Technology Inc.

Mitsubishi Materials Corporation

Genesis Technology Incorporation

Hayato Sasaki

Hideaki Yoshida

Akihiro Masuda

Toshinori Ishii

Tadashi Nakamura

Naoki Katou

Akihumi Mishima

Mituyoshi Ueki

Noriyoshi Tachikawa

Shou Tai

Naohumi Iwamoto

Atushi Matsuda

Toshiharu Hiji

Shoubin Zhang

Akifumi Mishima

Shozo Komiyama

A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of AlSiO, LaSiO, or InSiOis formed in a base of the target.

High-strength sputtering target for forming protective film for optical recording medium

A probe device having a contact probe including a film, a plurality of wiring patterns formed on the film with each wiring pattern having a front end portion projecting from the film so as to form contact pins, and a metal layer provided on the film. In one embodiment, the contact probe device includes first and second contact probes connected to each other, the first contact probe including a first film, and a plurality of first wiring patterns formed on the first film, each first wiring pattern having a front end portion projecting from the first film so as to form contact pins. The second contact probe includes a second film, and a plurality of second wiring patterns formed on the second film. The plurality of second wiring patterns are connected to the plurality of first wiring patterns, and the second contact probe is formed separately from the first contact probe.

Contact probe and probe device

Growing community of inventors

Sanda, Japan

Hayato Sasaki