Micron Technology Incorporated

Elpida Memory, Inc.

Hayato Oishi

Satoru Sugimoto

Hiroki Hosaka

Yoshinori Matsui

Yoshiro Riho

Yoshinori Haraguchi

Hisayuki Nagamine

Mitsuki Koda

Kyoka Egami

Memory devices are disclosed. A memory device may include a first row of power supply pads and a first row of input/output (DQ) pads. The memory device may further include a row of vias, wherein the first row of DQ pads is positioned at least partially between the row of vias and the first row of power supply pads. The memory device may also include a number of conductors, wherein each via of the row of vias is coupled, via an associated conductor of the number of conductors, to either a power supply pad of the first row of power supply pads or a DQ pad of the first row of DQ pads. Methods of forming an interface region of a memory device, and electronic systems are also disclosed.

Microelectronic device interface configurations, and associated methods, devices, and systems

Disclosed herein is a method for designing a semiconductor device, the method including: assigning a plurality of wiring tracks including first and second tracks; connecting a first data I/O circuit to a first data node of a first circuit by a first signal bus arranged on the first wiring track; connecting a second data I/O circuit to a second data node of the first circuit by a second signal bus arranged on the second wiring track when a first design mode is selected; and connecting the first data I/O circuit to a second circuit by a second signal bus arranged on the second wiring track when a second design mode is selected.

Semiconductor device having plural signal buses for multiple purposes

Some embodiments include an integrated assembly having a capacitive unit which includes a plurality of capacitive subunits. A first conductive structure is under a first group of the capacitive subunits and is coupled with them. A second conductive structure is under a second group of the capacitive subunits and is coupled with them. A third conductive structure is over the capacitive subunits and is coupled with all of the capacitive subunits. A resistive structure extends under the first and second conductive structures. The resistive structure has a first-end-region under the first conductive structure and coupled with the first conductive structure. The resistive structure includes resistive lines extending from the first-end-region to second-end-regions.

Integrated assemblies having capacitive units, and having resistive structures coupled with the capacitive units

Apparatuses for providing buffer circuits a semiconductor device are described. An example apparatus includes a plurality of inverters and a transistor having one diffusion region coupled to a diffusion region of a transistor of one inverter of the plurality of inverters, another diffusion region coupled to a diffusion region of a transistor of another inverter of the plurality of inverters. The transistor having a gate coupled to one power supply voltage and diffusion regions coupled to another power supply voltage functions as a power voltage compensation capacitor.

Buffer circuit

Disclosed herein is a device that includes first and second ports arranged in a first direction and first and second circuits arranged between the first and second ports. The first and second ports are coupled to the first and second circuits, respectively. The first and second circuits include first and second sub circuits that control an operation timing thereof based on a timing signal, respectively. The control signal is transmitted through a control line extending in a second direction. Distances between the control line and the first and second sub circuits in the first direction are the same as each other. A coordinate of the control line in the first direction is different from an intermediate coordinate between coordinates of the first and second ports in the first direction.

Semiconductor device having plural circuit blocks operating at the same timing

A semiconductor memory device includes a plurality of banks, each of which is constituted of a plurality of memory cell arrays that are aligned in series in the longitudinal direction, wherein each memory cell array includes a plurality of memory cells, and wherein memory cell arrays of banks are collectively aggregated into a plurality of blocks, each of which includes memory cell arrays aligned in the perpendicular direction, in connection with a plurality of DQ pads. DQ pads are arranged in proximity to blocks. Substantially the same distance is set between memory cells and DQ pads so as to reduce dispersions in access times with respect to all DQ pads, thus achieving high-speed access in the semiconductor memory device. The wiring region of IO lines is reduced in the center area of the chip.

Semiconductor memory device

A semiconductor device includes a column decoder that generates a column selecting signal that selects any of a plurality of bit line pairs to which memory cells are connected according to a column address that is input; a bit line selecting switch that connects by the column selecting signal any of a plurality of bit line pairs and a data I/O line pair that outputs data that has been read from a memory cell to the outside; a data amplifier that amplifies a voltage differential of a data I/O line pair and outputs data that has been read to an output buffer; a data I/O line switch that is provided in the data I/O lines; an I/O line precharge circuit that precharges a data I/O line pair that is not on the side of the data amplifier; and an amplifier precharge circuit that precharges a data I/O line pair that is on the side of the data amplifier.

Growing community of inventors

Tokyo, Japan

Hayato Oishi