Lintec Corporation

Hayato Noguchi

Kazuyoshi Ebe

Yoshihisa Mineura

Hideki Numazawa

Katsuhisa Taguchi

Yuichi Iwakata

Katsuhiko Horigome

Takeshi Kondoh

Kazuyosi Ebe

Disclosed herein is a pressure sensitive adhesive double coated sheet comprising a shrink substrate and, superimposed on one side thereof, an energy radiation curable pressure sensitive adhesive layer and, superimposed on the other side thereof, a removable pressure sensitive adhesive layer composed of an adhesive having a modulus of elasticity at 120&#xb0; C. of 5&#xd7;10Pa or less. The pressure sensitive adhesive double coated sheet according to the invention enables efficiently processing a work piece with high precision. In particular the pressure sensitive adhesive double coated sheet is suitable to a process capable of producing IC chips of high thickness precision with high yield by reducing warp and minimizing carrying breakage in the grinding of extremely thin or large diameter silicon wafers and capable of performing back grinding and dicing in the same configuration. Further, the invention provides a process of producing semiconductors of high reliability in which the above pressure sensitive adhesive double coated sheet is used.

Pressure sensitive adhesive double coated sheet and method of use thereof

A method of processing a semiconductor wafer. The wafer is secured to a wafer supporting member having a data carrier. Information required for working the semiconductor wafer is input to the data carrier. The wafer is then worked according to information read from the data carrier. The data carrier is configured to permit operations such as back grinding, dicing and pickup of the wafer, and prevents wafer breakage when the wafer is carried between different operations.

Method of processing semiconductor wafer and semiconductor wafer supporting member

Process for producing a chip

A process for producing semiconductor chips, comprising the following steps. A semiconductor wafer having a surface overlaid with circuits is provided. An arrangement wherein a back of the semiconductor wafer is fixed on a dicing tape and wherein a pressure sensitive adhesive double coated sheet is stuck to a circuit surface of the semiconductor wafer is formed. The pressure sensitive adhesive double coated sheet comprises a shrinkable base having its both sides overlaid with pressure sensitive adhesive layers. At least one of the layers is composed of an energy radiation curable pressure sensitive adhesive. The semiconductor wafer together with the pressure sensitive adhesive double coated sheet is diced by each circuit to thereby form semiconductor chips. The semiconductor chips are fixed on a transparent hard plate by adherence of the pressure sensitive adhesive layer of the pressure sensitive adhesive double coated sheet remote from the semiconductor chips. The dicing tape is stripped from the semiconductor chips. The pressure sensitive adhesive double coated sheet, on its transparent hard plate side, is irradiated with energy radiation. The shrink base of the pressure sensitive adhesive double coated sheet is shrunk, and the semiconductor chips are picked up. In the working of a semiconductor wafer into extremely reduced thickness, semiconductor chips can be produced with high yield without suffering from damaging of semiconductor chips such as chip splitting or cracking.

Process for producing semiconductor chip

Disclosed herein is a pressure sensitive adhesive double coated sheet comprising a shrink substrate and, superimposed on both sides thereof, pressure sensitive adhesive layers, at least one of the pressure sensitive adhesive layers being composed of an energy radiation curable pressure sensitive adhesive. The pressure sensitive adhesive double coated sheet according to the invention enables efficiently processing a work piece with high precision. In particular the pressure sensitive adhesive double coated sheet is suitable to a process capable of producing IC chips of high thickness precision with high yield by reducing warpage and minimizing carrying breakage in the grinding of extremely thin or large diameter silicon wafers and capable of performing back grinding and dicing in the same configuration. Further, the invention provides a process of producing semiconductors of high reliability in which the above pressure sensitive adhesive double coated sheet is used.

Method of using pressure sensitive adhesive double coated sheet

Pressure sensitive adhesive sheet for producing a chip

Process for producing chip and pressure sensitive adhesive sheet for said process

A process for producing a chip, comprising the steps of:

Process for producing chip and pressure sensitive adhesive sheet for

An energy beam curable pressure sensitive adhesive composition is disclosed which comprises at least two energy beam curable copolymers having energy beam polymerizable groups in side chains thereof. This energy beam curable pressure sensitive adhesive composition has satisfactory adhesive strength before the irradiation with energy beam and can be cured by the irradiation with energy beam to a degree such that the amount of adhesive residue remaining on an adherend after peeling is extremely small. Further, the above composition ensures excellent expansibility at the expanding step and excellent recognition at the time of pickup. Still further, the above composition exhibits high work efficiency because of very low pickup strength at the bonding step, irrespective of the execution of the expanding step.

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Urawa, Japan

Hayato Noguchi