Murata Manufacturing Co., Ltd.

Renesas Electronics Corporation

Hayato Nakamura

Satoshi Tanaka

Takayuki Tsutsui

Kazuhito Nakai

Mitsuo Ariie

Masahiro Ito

Hidetoshi Matsumoto

Kiichiro Takenaka

Satoshi Arayashiki

Tsuyoshi Sato

Masakazu Hori

Tadashi Matsuoka

Yusuke Tanaka

Yasushi Shigeno

Motoji Tsuda

Fuminori Morisawa

Yusuke Shimamune

Eigo Tange

Takashi Sato

Akira Kuriyama

Takaaki Morimoto

Tsutomu Onaro

A radio frequency module includes a module substrate; a power amplifier disposed on or over the module substrate, amplifies a radio frequency signal, and outputs the amplified radio frequency signal as the first transmission signal; a power amplifier disposed on or over the module substrate, amplifies a radio frequency signal, and outputs the amplified radio frequency signal as the second transmission signal; a temperature sensor disposed on or over the module substrate; and a PA control circuit disposed on or over the module substrate and controls amplification operations of the power amplifiers according to a measurement value of the temperature sensor. The maximum output power of the power amplifier is greater than the maximum output power of the power amplifier, and the distance between the temperature sensor and the power amplifier is less than or equal to the distance between the temperature sensor and the power amplifier.

Radio frequency module and communication device

A high-frequency circuit includes a power amplifier for a communication band A, and a power amplifier for a communication band B. Transmission in the communication band A, transmission in the communication band B, and reception in the communication band C can be simultaneously used. A frequency range of intermodulation distortion generated between a second harmonic wave of a transmission signal of the communication band A and a fundamental wave of a transmission signal of the communication band B, overlaps with at least part of a reception band of the communication band C. The power amplifier includes amplifying elements and an output trans including coils. One end of the coil is connected with an output of the amplifying element, the other end of the coil is connected with an output of the amplifying element, and one end of the coil is connected with an output terminal of the power amplifier.

High-frequency circuit and communication device

Provided is a current output circuit that includes: a first FET that has a power supply voltage supplied to a source thereof, that has a first voltage supplied to a gate thereof and that outputs a first current from a drain thereof; a second FET that has the power supply voltage supplied to a source thereof, that has the first voltage supplied to a gate thereof and that outputs an output current from a drain thereof; a first control circuit that controls the first voltage such that the first current comes to be at a target level; and a second control circuit that performs control such that a drain voltage of the first FET and a drain voltage of the second FET are made equal to each other.

Current output circuit

Provided is a communication unit that includes first and second power-amplification modules, which can be integrated. The first power-amplification module includes a first power-amplifier for a first frequency band in a first communication scheme, a second power-amplifier for a second frequency band in the first communication scheme, a third power-amplifier for a third frequency band in a second communication scheme, a fourth power-amplifier for a fourth frequency band in the second communication scheme, a first bias circuit that generates a first bias current to the first and second power-amplifiers, and a bias current circuit that converts the first bias current into a second bias current to the third and fourth power-amplifiers. The second power-amplification module includes a fifth power-amplifier for a fifth frequency band in the first communication scheme, and a second bias circuit that generates a third bias current to the fifth power-amplifier.

Power amplification module for multiple bands and multiple standards

Improvement in linearity is achieved at low costs in a power amplifier module employing an envelope tracking system. The power amplifier module includes a first power amplifier circuit that amplifies a radio frequency signal and that outputs a first amplified signal, a second power amplifier circuit that amplifies the first amplified signal on the basis of a source voltage varying depending on amplitude of the radio frequency signal and that outputs a second amplified signal, and a matching circuit that includes first and second capacitors connected in series between the first and second power amplifier circuit and an inductor connected between a node between the first and second capacitors and a ground and that decreases a gain of the first power amplifier circuit as the source voltage of the second power amplifier circuit increases.

Power amplifier module

Provided is a high frequency module capable of reducing the IMD. During the transmission/reception operation based on W-CDMA, control signals VSWCC, VTRXCC are output as Hi signals from a control logic. Consequently, transistor Tis turned ON, and transistors T, Tare respectively turned OFF. When the transistor Tis turned ON, the voltage output from an operational amplifier is output as the signal VVSW to a control terminal, and the control signal VTRXC is output as a Hi signal. The signal VVSW is of a voltage level that is lower than that of the control signal VTRXC. The control signal VTRXC is a signal for turning ON a transistor circuit Q, and the signal VVSW is a signal for supplying a DC voltage to the antenna potential. It is thereby possible to reduce the ON resistance of the transistor circuit Qand improve the IMD characteristics.

High frequency module

Disclosed is a power amplification module which has a comparatively small size and is capable of adjusting the rising characteristic of a gain. The power amplification module includes a first gain control current generation circuit which generates a first gain control current changing with a control voltage, a first bias current generation circuit which generates a first bias current according to the first gain control current, a gain control voltage generation circuit which generates a gain control voltage changing with the control voltage, a first transistor which is emitter-grounded and in which an input signal and the first bias current are supplied to a base thereof, and a second transistor which is cascode-connected to the first transistor and in which the gain control voltage is supplied to a base thereof and a first output signal obtained by amplifying the input signal is output from a collector thereof.

Power amplification module

An RF power amplifier device includes a driver stage amplifier, a first RF amplifier, a second RF amplifier and a DC voltage converter operated by first, second and third external power supply voltages. The output of the driver stage amplifier is supplied to the inputs of the first and second RF amplifiers. An effective device size of the first RF amplifier is set to a device size larger than that of the second RF amplifier. The third external power supply voltage is supplied to the DC voltage converter, so that the DC voltage converter generates a fourth operating power supply voltage corresponding to a low voltage and supplies it to an output terminal of the second RF amplifier. An output terminal of the first RF amplifier can be supplied with the second external power supply voltage without via the DC voltage converter.

RF power amplifier device and operating method thereof

Growing community of inventors

Kyoto, Japan

Hayato Nakamura