Murata Manufacturing Co., Ltd.

Hayato Katsu

Keisuke Nishida

Atsushi Kishimoto

Akinori Nakayama

Masato Goto

Naoaki Abe

Shinsuke Tani

Takayuki Okada

Ryo Asai

Hideaki Niimi

Yutaka Takeshima

Sakyo Hirose

Yasuhiro Nabika

Kentaro Usui

Kenjirou Mihara

Takahito Tomoda

Yui Nakamura

Wataru Aoto

Yumin Saigo

Takaaki Miyasako

A flexible wiring board that includes a flexible substrate; a flexible wiring over the flexible substrate; and a protective layer over the flexible substrate, where the protective layer includes: a first region that overlaps with the flexible wiring and a second region that does not overlap with the flexible wiring as viewed from a thickness direction of the flexible substrate, and a low flexibility part that is higher in flexibility ratio than the first region and is disposed along an extending direction of the flexible wiring in the second region.

Flexible wiring board

An elastic wiring board that includes an elastic substrate; a plurality of electrode wirings having elasticity; and an ion-migration resistant layer between at least a first electrode wiring of the plurality of electrode wirings and the elastic substrate.

Elastic wiring board

A stretchable wiring board that includes: a stretchable substrate; a first stretchable wiring extending in a length direction on a main surface side of the stretchable substrate; and a second stretchable wiring extending in the length direction on the main surface side of the stretchable substrate, the second stretchable wiring having a first portion with a first region overlapping on top of the first stretchable wiring on an end portion side of the first stretchable wiring, and a width of the first portion of the second stretchable wiring in a width direction orthogonal to the length direction is smaller than a width of the first stretchable wiring.

Stretchable wiring board and device with adhesive patch for living body

A stretchable wiring board that includes: a stretchable substrate; a first wiring line on the stretchable substrate; an insulating layer overlapping a first part of the first wiring line in a plan view of the stretchable wiring board; and a second wiring line overlapping the first part of the first wiring line in the plan view with the insulating layer interposed therebetween. The insulating layer has at least one first notch, and in the plan view, the at least one first notch does not overlap the first wiring line and overlaps the second wiring line.

Stretchable wiring board

A stretchable mounting board that includes a stretchable substrate having a main surface, a stretchable wiring disposed on the main surface of the stretchable substrate, a mounting electrode section electrically connected to the stretchable wiring, solder electrically connected to the mounting electrode section and including bismuth and tin, and an electronic component electrically connected to the mounting electrode section with the solder interposed therebetween. The mounting electrode section has a first electrode layer on a side thereof facing the stretchable wiring and which includes bismuth and tin, and a second electrode layer on a side thereof facing the solder and which includes bismuth and tin. A concentration of the bismuth in the first electrode layer is lower than a concentration of the bismuth in the second electrode layer.

Stretchable mounting board

A stretchable mounting board that includes a mounting electrode section electrically connected to stretchable wiring, and solder electrically connected to the mounting electrode section. The mounting electrode section has a first electrode layer on a side thereof facing the stretchable wiring and which includes bismuth and tin, and a second electrode layer on a side thereof facing the solder and which includes bismuth and tin. A concentration of the bismuth in the first electrode layer is lower than a concentration of the bismuth in the second electrode layer, and the concentration of the bismuth in the second electrode layer is constant along a thickness direction thereof.

A ceramic member comprising a compound oxide of La, E and Mn, wherein AE is (i) Ca, or (ii) contains Ca and at least one of Sr and Ba with a total amount of Sr and Ba to a total of Ca, Sr and Ba of not more than 5 mol %, and a crystal system in a surface of the ceramic member is a monoclinic system.

Ceramic member

A ceramic material has a composition represented by the formula: LaAEMnOin which AE is at least one of Ca and Sr; x satisfies 0&#x3c;x&#x2264;about 0.20; and y satisfies 0&#x3c;y&#x2264;about 0.10.

Ceramic material and resistive element

A laminated PTC thermistor element that includes a ceramic substrate including a plurality of ceramic layers, a plurality of internal electrodes within the ceramic substrate, and external electrodes on the surface of the ceramic substrate that provide electrical conduction to the internal electrodes. The ceramic substrate is 0.3 [&#x3bc;m] or more and 1.2 [&#x3bc;m] or less in average porcelain grain size. Furthermore, the relative density of the ceramic substrate has a lower limit of 70 [%], and an upper limit of &#x2212;6.43d+97.83 [%] when the average porcelain grain size is denoted by d.

Laminated PTC thermistor element

Provided is a barium titanate-based semiconductor ceramic composition which contains no Pb, which can have an increased Curie temperature, which exhibits slight deterioration with time, and which has high reliability, containing a barium titanate-based semiconductor ceramic represented by the composition formula (BaSr(A1Bi)A2)TiO, where A1 is an alkali metal element, A2 is a rare-earth element, 0.03&#x2266;x&#x2266;0.20, 0.02&#x2266;y&#x2266;0.20, and 0.0005&#x2266;z&#x2266;0.015, and x&#x2212;0.10&#x2266;y&#x2266;(5/4)&#xb7;x. In addition, 0.01 to 0.20 molar parts of Mn per 100 molar parts of Ti is preferably added thereto.

Barium titanate-based semiconductor ceramic composition and PTC thermistor

A semiconductor ceramic includes a BaTiO-based composition, as a main component, having a perovskite structure represented by general formula ABO, wherein part of Ba constituting the A site is replaced with Na, Bi, Ca, and a rare-earth element having an ionic radius smaller than that of the Na; the content of the rare-earth element when the total number of moles of the elements constituting the A site is 1 mole is 0.0005 to 0.015 on a molar basis; and the content of the Ca when the total number of moles of the elements constituting the A site is 1 mole is 0.05 to 0.20 (preferably 0.125 or more and 0.175 or less) on a molar basis. A PTC thermistor includes a component bodyformed of the semiconductor ceramic. Accordingly, high reliability is achieved even if an alkali metal element is present.

Semiconductor ceramic and positive temperature coefficient thermistor

A semiconductor ceramic includes a BaTiO-based composition, as a main component, having a perovskite structure represented by general formula ABO. The molar ratio m between the A site and the B site satisfies 1.001&#x2266;m&#x2266;1.01. Part of Ba constituting the A site is replaced with Bi, Ca, a rare-earth element, and Na. The molar content of the Ca when the total number of moles of the elements constituting the A site is 1 mole is 0.05 to 0.20 (preferably 0.125 to 0.175). A PTC thermistor includes a component body formed of the semiconductor ceramic. Accordingly, there is provided a lead-free semiconductor ceramic that substantially does not contain lead and that has desired PTC characteristics and high reliability.

A semiconductor ceramic includes a BaTiO-based composition, as a main component, having a perovskite structure represented by general formula ABO. Part of Ba constituting an A site is replaced with at least an alkali metal element, Bi, and a rare-earth element, and the molar ratio m between the A site and a B site is 0.990&#x2266;m&#x2266;0.999 (preferably 0.990&#x2266;m&#x2266;0.995). Preferably, part of the Ba is replaced with Ca, and the content of the Ca when the total number of moles of the elements constituting the A site is 1 mole is 0.042 to 0.20 (preferably 0.125 to 0.175) on a molar basis. A PTC thermistor includes a component body formed of the semiconductor ceramic. Accordingly, there are provided satisfactory rise characteristics even if an alkali metal element is present.

A semiconductor ceramic includes a BaTiO-based composition, as a main component, having a perovskite structure represented by general formula ABO. Part of the A site Ba is replaced with an alkali metal element, Bi, Ca, Sr, and a rare-earth element. When the molar amounts of Ca and Sr are x and y, respectively, and the total number of moles of the elements constituting the A site is 1 mole, 0.05&#x2266;x&#x2266;0.20, 0.02&#x2266;y&#x2266;0.12, and 2x+5y&#x2266;0.7. A PTC thermistor includes a component body formed of the semiconductor ceramic. Even when an alkali metal element and Bi are present, there is provided a lead-free semiconductor ceramic with high reliability in which the surface discoloration is not caused and the degradation of resistance over time can be suppressed even after the application of an electric current for a long time.

A semiconductor ceramic material which contains no Pb and has a high Curie point, low resistivity, and PTC characteristics is represented by the formula ABOwherein A includes Ba, Ca, an alkali metal element, Bi, and a rare-earth element, and B includes Ti. The semiconductor ceramic material contains 5 to 20 molar parts and preferably 12.5 to 17.5 molar parts of Ca per 100 molar parts of Ti. The ratio of the content of the alkali metal element to the sum of the content of the bismuth plus the content of the rare earth element, is preferably from 1.00 to 1.06. The semiconductor ceramic material preferably further contains 0.01 to 0.2 molar parts of Mn per 100 molar parts of Ti.

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Nagaokakyo, Japan

Hayato Katsu