Nissan Chemical Corporation

Hayato Hattori

Makoto Nakajima

Wataru Shibayama

Ken Ishibashi

Hirokazu Nishimaki

Hiroto Ogata

Hikaru Tokunaga

Yuki Mitsutake

A composition for forming a resist underlayer film includes: (A) a crosslinkable compound represented by formula (I) and (D) a solvent. [In the formula, n is an integer of 2-6, the n-number of Z each independently are monovalent organic groups including a mono-, di-, tri-, tetra-, penta-, or hexaformylaryl group, the n-number of A each independently represent —OCHCH(OH)CHO— or (BB), and T is an n-valent hydrocarbon group and/or repeating unit of a polymer optionally having at least one group selected from the group made of a hydroxy group, an epoxy group, an acyl group, an acetyl group, a benzoyl group, a carboxy group, a carbonyl group, an amino group, an imino group, a cyano group, an azo group, an azide group, a thiol group, a sulfo group, and an allyl group and optionally interrupted by a carbonyl group and/or an oxygen atom.]

Resist underlayer film-forming composition

A resist underlayer film forming composition contains a reaction product of an aromatic compound (A) having 6 to 60 carbon atoms and a compound represented by formula (B), and a solvent. (In the formula, X represent an oxygen atom or a nitrogen atom; Y represents a single bond, an oxygen atom or a nitrogen atom; X and Y may combine with each other to form a ring; and each of R, R, Rand Rindependently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cyclic alkyl group having 3 to 8 carbon atoms or an aromatic group having 6 to 10 carbon atoms; provided that Ris present only in cases where X is a nitrogen atom, and Ris present only in cases where Y is a nitrogen atom.)

A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1):RRSi(R)  Formula (1)wherein Ris an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; Ris an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; Rand Rare optionally bonded together to form a ring structure; Ris an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3; and the hydrolysis condensate contains an organic group having a salt structure formed between a counter anion derived from a nitric acid and a counter cation derived from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.

Silicon-containing resist underlayer film-forming composition including organic group having ammonium group

A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1):RRSi(R)  Formula (1)(wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group

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Toyama, Japan

Hayato Hattori