Texas Instruments Corporation

Hayato Deguchi

Takayuki Niuya

Vikram N Doshi

Hiroshi Ono

A technique for reducing active area encroachment (birdsbeak) by using a polysilicon hard mask combined with both wet and dry etch for the isolation nitride. This process forms a thinner layer of nitride adjacent the openings for oxide growth, which reduces stress at the silicon/nitride interface. The advantages include control over birdsbeak, reliable gate oxide quality, low junction leakage current, an improved active area, improved isolation, low peripheral junction leakage, and higher field transistor threshold voltage.

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Plano, TX, United States of America

Hayato Deguchi