Analog and Power Electronics Corp.

Analog and Power Electrics Corp.

Hau-Luen Tien

Ching-Hsiang Hsu

Huang-Chung Cheng

Ming-Jang Lin

Chorng-Wei Liaw

Wei-Jye Lin

Tian-Fure Shiue

A power chip set for a switching mode power supply includes a high voltage chip and a control unit chip. The high voltage chip contains a switching power metal-oxide-semiconductor (MOS) transistor being turned on/off under control of an output signal from the control unit, and a junction field effect transistor (JFET) coupled between a drain of the switching power MOS transistor and a power terminal of the control unit to serve as a start up element for driving the control unit during initiation, in which the JFET has a negative threshold voltage and the absolute value thereof is equal to the voltage for driving the control unit. The JFET structure in the high voltage chip further includes a Zener diode for over voltage protection of the control unit. The high voltage chip further contains a current-sense power MOS transistor coupled with the drain of the switching power MOS transistor for detecting a drain current of the switching power MOS transistor. The chip set can be packaged into a power module.

Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup

A latch-up controllable insulated gate bipolar transistor is formed with a thyristor structure, which has a first region of a first conductivity type, a second region of a second conductivity type formed on the first region, a third region of the first conductivity type formed on the second region, and a fourth region of the second conductivity type contacting the third region and forming a P-N junction therewith. The first and third regions contact a first and second electrode regions respectively. A first field effect transistor means for controlling conduction between the fourth region and the second region in response to an actuation bias; and a second field effect transistor means between the fourth region and the second electrode region for turning the thyristor off in response to a cutoff bias. The insulated gate bipolar transistor of the present invention are latch-up controllable, of a high voltage withstand and of a lower forward voltage drop simultaneously

Latch-up controllable insulated gate bipolar transistor

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Taipei, Taiwan

Hau-Luen Tien