Texas Instruments Corporation

Hassan Pooya Forghani-Zadeh

Timothy Bryan Merkin

Ariel Dario Moctezuma

Sameer P Pendharkar

Srinath Hosur

Sujan Kundapur Manohar

Byungchul Jang

Erick Omar Torres

Luis Alberto Huertas-Sanchez

In described examples of a circuit that operates as a low-power ideal diode, and an IC chip that contains the ideal diode circuit, the circuit includes: a first P-channel transistor connected to receive an input voltage on a first terminal and to provide an output voltage on a second terminal; a first amplifier connected to receive the input voltage and the output voltage and to provide a first signal that dynamically biases a gate of the first P-channel transistor as a function of the voltage across the first P-channel transistor; and a second amplifier connected to receive the input voltage and the output voltage and to provide a second signal that acts to turn off the gate of the first P-channel transistor responsive to the input voltage being less than the output voltage.

Low power ideal diode control circuit

A system includes a switching converter circuit and a monitoring circuit coupled to the switching converter circuit. The monitoring circuit includes a current estimation circuit configured to estimate an output current of the switching converter circuit. The monitoring circuit also includes a compare circuit configured to compare the estimated average output current with a threshold, wherein the compare circuit is configured to output an alert signal in response to the estimated output current being greater than the threshold.

Switching converter with output current estimator circuit

In described examples, in response to a voltage at an external power terminal falling below a safe limit: a charge pump is operated at a first frequency to produce a voltage at a charge pump node; and a first controlled current is coupled from the charge pump node to a control terminal of a power switch transistor. The power switch transistor has a conduction path coupled between the external power terminal and an internal power terminal at which an internal power source is connected. In response to the voltage at the external power terminal reaching a selected level: the charge pump is operated at a second frequency, lower than the first frequency; and a second controlled current, lower than the first controlled current, is coupled from the charge pump node to the control terminal of the power switch transistor.

Fast turn-on power switch

USB controllers, systems and methods are presented to conserve power in a USB controller, in which a transmitter transmits data to a line of a connected USB cable according to a transmit data signal, and a pull down circuit selectively sinks current from a supply node of the transmitter when the transmit data signal is in a first state, refrains from sinking the first current from the supply node when the transmit data signal is in a different second state.

Circuit and method for interfacing universal serial bus

Protection circuits, USB interface integrated circuits, and methods for protecting host circuitry from USB port pin overvoltages, in which a switch is connected between a USB port pin and a middle node, and a detection circuit compares the middle node voltage with a reference voltage. A control circuit turns off the switch and turns on a clamp circuit to conduct pull down current from the middle node in response to the middle node voltage exceeding the reference voltage to mitigate overvoltage conditions on a host pin coupled to the middle node. When the middle node voltage falls below the reference voltage, the control circuit delays for a predetermined time and then turns off the clamp circuit and turns on the switch.

Overvoltage protection circuit for USB interface

Disclosed examples include ICs and general-purpose I/O circuitry to facilitate interfacing of the IC with a variety of external circuits operating at different supply voltages, in which an integer number N supply drive circuits are individually coupled with a corresponding supply voltage node and selectively connect the corresponding supply voltage node to a general-purpose output node based on a supply drive control signal to allow programmable interfacing of individual general-purpose output pads or pins of the IC with an external circuit at the appropriate signal level.

Multi-supply output circuit

A circuit that operates as a low-power ideal diode is disclosed, as well as an IC chip that contains the ideal diode circuit. The circuit includes a first P-channel transistor connected to receive an input voltage on a first terminal and to provide an output voltage on a second terminal, a first amplifier connected to receive the input voltage and the output voltage and to provide a first signal that dynamically biases a gate of the first P-channel transistor as a function of the voltage across the first P-channel transistor, and a second amplifier connected to receive the input voltage and the output voltage and to provide a second signal that acts to turn off the gate of the first P-channel transistor responsive to the input voltage being less than the output voltage.

A semiconductor device includes a depletion mode GaN FET cascoded with an enhancement mode NMOS transistor. A gate of the GaN FET is electrically coupled to a source of the NMOS transistor through a gate network. The gate network controls at least one of a turn-on time and a turn-off time of the GaN FET. The gate network may be controlled by an input signal to a gate of the NMOS transistor.

Controlled on and off time scheme for monolithic cascoded power transistors

A half-bridge power circuit comprises a first gallium nitride field effect transistor (GaN FET); a first driver coupled to a gate of the first GaN FET; an anode of a capacitor coupled to an output of the driver and a source of the first GaN FET; a diode having a cathode coupled to the cathode of the capacitor; and a bootstrap capacitor clamp (BCC) controller, including: a field effect transistor (FET) coupled to an anode of the diode, and a comparator coupled to a gate of the FET, the comparator configured to receive as inputs: a) a signal representative of an input voltage (VDRV) applied to the FET; b) a ground; c) a boot signal representative of a voltage at the anode of the capacitor (Boot); and d) a signal representative of a voltage at the source of the first GaN FET (SW).

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Fort Worth, TX, United States of America

Hassan Pooya Forghani-Zadeh