Stmicroelectronics S.a.

Stmicroelectronics (crolles 2) Sas

Hassan El Dirani

Pascal Fonteneau

Yohann Solaro

Philippe Galy

Thomas Bedecarrats

An inverter includes a semiconductor substrate. A Z2-FET switch is disposed at a first surface of the semiconductor substrate and a further switch is disposed at the first surface of the semiconductor substrate. The further switch and the Z2-FET switch have current paths coupled between a first reference terminal and a second reference terminal.

Inverting circuit

A memory array includes memory cells of Z-FET type arranged in rows and columns, wherein each memory cell includes a MOS-type selection transistor and a first region of a first conductivity type that is shared in common with a drain region of the first conductivity type of the selection transistors. The selection transistors of a same column of the memory array have a common drain region, a common source region, and a common channel region.

Memory array comprising memory cells of Z2-FET type

A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and including a doped source region of a first conductivity type, a doped drain region of a second conductivity type, and an intermediate region, non-doped or more lightly doped, with the second conductivity type, than the drain region, the intermediate region including first and second portions respectively extending from the drain region and from the source region. An insulated front gate electrode rests on the first portion. A first back gate electrode and a second back gate electrode are arranged under the insulating layer, respectively opposite the first portion and the second portion.

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Grenoble, France

Hassan El Dirani