Lam Research Corporation

Haseeb Kazi

Yoshie Kimura

Ganesh Upadhyaya

Xiang Zhou

Radhika C Mani

Chen Xu

Duming Zhang

Mitchell Brooks

Naveed Ansari

Si-Yi Yi Li

Kazi Sultana

Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Atomic layer deposition and etch for reducing roughness

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Santa Clara, CA, United States of America

Haseeb Kazi