Samsung Electronics Co., Ltd.

Adeka Corporation

Haruyoshi Sato

Youn-Joung Cho

Naoki Yamada

Gyu-Hee Park

Jae-Soon Lim

Youn-soo Kim

Hiroyuki Uchiuzou

Kazuki Harano

Akio Saito

Atsushi Sakurai

Tomoharu Yoshino

Younjoung Cho

Jung-sik Choi

Akihiro Nishida

Tsubasa Shiratori

Takanori Koide

Kyoo-Chul Cho

Atsuya Yoshinaka

Junji Ueyama

Senji Wada

Sang-Chul Youn

Gyuhee Park

Masako Shimizu

Jin-Seo Lee

Hyunwoo Kim

Hiroki Sato

Younsoo Kim

Atsushi Yamashita

Kiyoshi Murata

Seungmin Ryu

An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

Yttrium compound and method of manufacturing integrated circuit device by using the same

A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):

Molybdenum compound and method of manufacturing integrated circuit device using the same

A raw material for forming a thin film that includes a compound represented by General Formula (1) below.  In the formula, Rrepresents a linear or branched alkyl group having 2 to 4 carbon atoms; Rto Reach independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.

Raw material for forming thin film, and method for manufacturing thin film

A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, 

Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound

A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Method of forming a thin film

Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device

Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Nickel compound and method of forming thin film using the nickel compound

A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.

Method of forming thin film using a heterostructured nickel compound

The &#x3b2;-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the &#x3b2;-ketoimine ligand. A method of forming the &#x3b2;-ketoimine ligand and a method of forming a thin film using the metal complex compound including &#x3b2;-ketoimine ligand are provided.

&#x3b2;-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

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Tokyo, Japan

Haruyoshi Sato