Kabushiki Kaisha Nihon Micronics

Guala Technology Co., Ltd.

Guala Technology Corporation

Harutada Dewa

Kiyoyasu Hiwada

Akira Nakazawa

Tomokazu Saito

Nobuaki Terakado

Kazuyuki Tsunokuni

Takuo Kudoh

Takashi Tonokawa

Hikaru Takano

A secondary battery according to the present invention includes a first electrode, a second electrode, a charging layer arranged between the first electrode () and the second electrode and containing a mixture of an insulating material and a first n-type oxide semiconductor material, an n-type oxide semiconductor layer arranged between the charging layer and the first electrode and containing a second n-type oxide semiconductor material, a p-type oxide semiconductor layer () arranged between the charging layer and the second electrode and containing a p-type oxide semiconductor material, a mixture layer arranged between the charging layer and the p-type oxide semiconductor layer and containing a mixture of silicon oxide and a third n-type oxide semiconductor material, and a conductive layer arranged between the first electrode and the n-type oxide semiconductor layer and containing a metal material.

Secondary battery

A method for manufacturing a secondary cell, the secondary cell including a charging layer that captures electrons by forming energy levels in a band gap by causing a photoexcited structural change in an n-type metal oxide semiconductor coated with an insulating material, includes a coating step to coat a coating liquid so as to form a coating film that includes constituents that will form the charging layer; a drying step to dry the coating liquid coated in the coating step; a UV irradiating step to form a UV-irradiated coating film by irradiating the dried coating film obtained through the drying step with ultraviolet light; and a burning step to burn a plurality of the UV-irradiated coating films, after forming the plurality of UV-irradiated coating films by repeating a set plural times, the set including the coating step, the drying step, and the UV irradiating step.

Method for manufacturing secondary cell

An electrode probe is brought into contact with a measurement part on an outer surface of at least one of the positive electrode and the negative electrode of a sheet type cell, and quantity of electricity is measured at the measurement part, so as to evaluate the sheet type cell. The electrode probe may be connected to a voltage meter and to a charge source or a discharge source, and the evaluation made by detecting a charge characteristic that changes the cell from a non-charged state to a fully charged state, a discharge characteristic that changes the cell from a fully charged state to the non-charged state, or a measurement voltage of the voltage meter when the cell is in the fully charged state.

Evaluation apparatus and evaluation method of sheet type cell

A repair apparatus of a sheet type cell is capable of appropriately repairing and detoxifying defects of a sheet type cell having semiconductor characteristics. The repair apparatus repairs a sheet type cell in which a storage layer is sandwiched by layers of a positive electrode and a negative electrode and at least the storage layer has semiconductor characteristics. The repair apparatus applies electrical stimulation between the positive electrode and the negative electrode, measures electrical characteristics of the sheet type cell when the electrical stimulation is applied, and specifies a value of the electrical stimulation by the electrical stimulation source while considering measured electrical characteristics.

Repair apparatus of sheet type cell

A testing device and method of a quantum battery by a semiconductor probe capable of evaluating electric characteristics of a charge layer in the middle of a production process of the quantum battery without damaging the charge layer. On semiconductor probe constituted by stacking electrode and metal oxide semiconductor on support body, and probe charge layer is formed of the same material as that of quantum battery and irradiated with ultraviolet rays. Forming probe charge layer of same material as that of quantum battery on semiconductor probe enables evaluation without damaging charge layer of the quantum battery. Testing device and method are provided which measure the charge/discharge characteristics of a charge layer in the middle of producing the quantum battery by a voltmeter and a constant current source or a discharge resistor by using the semiconductor probe including the probe charge layer.

Semiconductor probe, testing device and testing method for testing quantum battery

A charging/discharging device performs charging and discharging on a plurality of secondary cells concurrently in parallel, without adopting a power source having an extremely high current supply capacity. A plurality of switching units controlled by a switching control unit are interposed respectively between the secondary cells and each of a plurality of charging power lines and discharging power lines. A power unit applies voltages having mutually-different voltage values and the switching control unit controls switching so that the respective secondary cells are connected cyclically in predetermined order to the charging and discharge power lines.

Charging/discharging device

This invention provide a testing device and method for a quantum battery by a semiconductor probe, whereby the electrical characteristics of the charging layer can be evaluated during the quantum battery manufacturing process. The testing device equipped with a semiconductor probe constituted by a conductive electrode and a metal oxide semiconductor layer including a metal oxide semiconductor which are laminated on a support, a source voltage for applying voltage across an electrode equipped to the semiconductor probe and a basic electrode laminated on a secondary battery charging layer, and an ammeter for measuring the current flowing between the electrode equipped on the semiconductor probe and the basic electrode of the secondary battery on which charging layer is laminated, and measures the current-voltage characteristics of the charging layer.

Growing community of inventors

Tokyo, Japan

Harutada Dewa