Fujitsu Corporation

Haruo Tsuchikawa

Yasushi Takahashi

Junichi Kai

Koichi Kobayashi

Takayuki Miyazaki

A scanning electron beam exposure system includes two apertures (39a, 48a) for forming a rectangular beam (31). The cross section of the rectangular beam is changed by a deflection unit (47X, 47Y) arranged between the two apertures. The rectangular beam is refocused by a refocusing coil (51) to improve the peripheral sharpness of a projected image of the beam. The refocusing coil is controlled in accordance with the cross section (X.sub.1, Y.sub.1) of the beam.

Scanning electron beam exposure system

An electron beam exposure apparatus having a control apparatus wherein the positioning error caused by transient response characteristics of an electron beam deflection device is detected by using a knife-edge type gauge and a reflecting electron detector. A compensation signal to compensate for the positioning error is produced in a compensation device, and the compensation signal is applied to the electron beam deflection device, whereby the deviation of the position of the electron beam, from the normal position, caused by the transient response characteristics, is reduced.

Electron beam exposure apparatus

An electron beam exposure system and method which varies beam size from pattern to pattern corresponding to the accuracy required for each pattern. In order to improve the throughput of the exposer, the beam size is adjusted to the maximum size useable for each pattern. The pattern is divided into rectangles equal to the maximum beam size determined by the pattern size or the accuracy required for the pattern. If a residual part of the pattern smaller than a rectangle remains, the rectangles are adjusted to be smaller than the maximum beam size, so the entire area of the pattern can be divided into equal size rectangles. The pitch and size of the beam are adjusted to this new beam size and exposure is repeated according to the new size rectangles. To increase the processing speed, all the patterns to be exposed in one process are checked as to their size and required accuracy, and the data necessary for the pattern generation such as beam size, pitch and number of exposures are calculated in advance and stored in a memory of a beam controller.

Method and apparatus for an electron beam exposure system

In a D/A converter in a deflection system of an electron beam exposure device, the most significant bits (m bits) of input digital data consisting of n bits are input into a decoder circuit, and 2.sup.m D/A converters which correspond to the m bits are provided. The data consisting of the least significant bits (n-m bits) is input into the 2.sup.m D/A converters via 2.sup.m gates, respectively. The decoder circuit is constructed so as to control the 2.sup.m gates so that when the content of the data of the m bits is S, the first to S-th data of the 2.sup.m D/A converters is all rendered to be '1', the data of the (S+1)-th D/A converter remains the same as the data of the n-m bits, and the data of the (S+2)-th and subsequent D/A converters is all rendered to be '0', the sum of the outputs of the 2.sup.m D/A converters being applied to a coil which deflects the electron beam.

Deflection system in an electron beam exposure device

A scanning electron beam exposure system which comprises a main chamber (1), a subchamber (8), vacuum pumps (12, 13) and valves (10, 11, 14.about.16). The projection of an electron beam onto a workpiece within the main chamber is inhibited while an electrical or mechanical noise generated by at least one of the valves substantially exists.

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Yokohama, Japan

Haruo Tsuchikawa