Rohm Co., Ltd.

Rohm Gmbh

Nippon Telegraph and Telephone Corporation

Haruo Tanaka

Naotaro Nakata

Yukio Shakuda

Naofumi Aoki

Masato Mushiage

Hironobu Sai

Masahiko Tsumori

Jun Ichihara

Mitsuru Morimoto

Tomohiro Yamazaki

Hajime Sakiyama

Takashi Nakamura

Ken Nakahara

Chihaya Adachi

Gosuke Sakamoto

Takahito Oyamada

Tetsuhiro Tanabe

Kenji Okada

Hisayoshi Kitajima

Tetsuichi Inoue

Kaoru Kusunoki

Yuhji Ishida

Naotaroh Nakata

Hiroyuki Sasabe

An electroluminescent light emitting element is equipped with a metal electrode layer, a light emitting layer capable of emitting light by electroluminescence, and a transparent electrode layer provided in that order on a substrate, wherein the light emitted by said light emitting layer is emitted from the side adjacent to said transparent electrode layer.

Electroluminescent light emitting element having a metal electrode layer, a light emitting layer and an outermost transparent electrode layer

An optical transceiver is equipped with at least one coupling lens which condenses reception signal light from an optical medium and condenses transmission signal light to the optical medium, an optical plate which passes the reception signal light and reflects the transmission signal light, a light receiving element which receives the reception signal light passed through the optical plate, and a light emitting element which transmits the transmission signal light so as to be reflected by the optical plate, wherein an emission port of the transmission signal light of the light emitting element is arranged at a position to enable the transmission signal light from the light emitting element to form an image in the optical medium via the optical plate and the coupling lens, and wherein the emission port of the transmission signal light of the light emitting element is arranged in a direction that makes the incident angle formed on the optical plate by the beam center line of the transmission signal light transmitted from the light emitting element larger than the incident angle of the beam center line for maximally condensing the transmission signal light from the light emitting element to the optical medium in order to move the beam center line of the transmission signal light from the light emitting element away from the light receiving element, whereby it becomes possible to reduce the near-end crosstalk from the light emitting element to the light receiving element in the optical transceiver.

Optical transceiver

A semiconductor light-emitting device is made of a group III-nitride compound semiconductor expressed as AlGaInN (where 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;x+y&#x2266;1). The semiconductor light-emitting device includes: a substrate made of SiC; a semiconductor layer which is placed above the substrate and has a light-emitting region; a multi-layered reflective layer which is placed between the substrate and the semiconductor layer and which reflects light produced in the light-emitting region; and a phase matching layer which is placed between the substrate and the multi-layered reflective layer and which reflects light produced in the light-emitting region and matches a phase of light reflected from a lower boundary surface of the multi-layered reflective layer and a phase of light reflected from a lower boundary surface of the substrate among light produced in the light-emitting region. A thickness of the phase matching layer is set so that a quantity of interfering light produced by the interference of light reflected from the lower boundary surface of the multi-layered reflective layer, light reflected from a lower boundary surface of the phase matching layer, and light reflected from the lower boundary surface of the substrate among light produced in the light-emitting region is locally maximized when the substrate has a predetermined thickness.

Semiconductor light-emitting device

For example, a display element () formed by an organic EL element and a control element formed by a MOS transistor () are connected in series between a driving line () to be driven with a voltage or a current and a ground. A gate of the MOS transistor () is connected to a control line () through a nonvolatile data holding section such as a ferroelectric capacitor (), and control data of the MOS transistor () can be held in a floating state. As a result, the ON/OFF data of each pixel are held in the floating state, and display data are rewritten to only a pixel to be changed in a display state of ON/OFF or the like and held data are displayed on a pixel which is not changed in the display data. Consequently, it is possible to obtain a nonvolatile display device capable of reducing power consumption and operating with a small battery.

Display device and method of driving the same

A semiconductor light-emitting element 10 includes a silicon single crystal substrate 20 having a first and a second surfaces 20, 20in head-tail relationship with each other, a GaN-based semiconductor laminate 40 formed on a selected region of the first surface with a predetermined conductive intermediate layer 25 interposed therebetween, a first electrode layer 51 having a portion in contact with an uppermost layer of the GaN-based semiconductor laminate 40 and insulated from the monocrystal silicon substrate, and a second electrode layer 52 formed on a suitable portion of the monocrystal silicon substrate. The monocrystal silicon substrate 20 is formed with a light guide 30 for directing light emitted from the GaN-based semiconductor laminate 40 toward the second surface 20

Semiconductor light emitting element and method of making the same

A semiconductor light-emitting elementincludes a silicon single crystal substratehaving a first and a second surfacesin head-tail relationship with each other, a GaN-based semiconductor laminateformed on a selected region of the first surface with a predetermined conductive intermediate layerinterposed therebetween, a first electrode layerhaving a portion in contact with an uppermost layer of the GaN-based semiconductor laminateand insulated from the monocrystal silicon substrate, and a second electrode layerformed on a suitable portion of the monocrystal silicon substrate. The monocrystal silicon substrateis formed with a light guidefor directing light emitted from the GaN-based semiconductor laminatetoward the second surface

An optical transmitter is equipped with a laser diode and a light detector provided on a packaging base, in which the light detector has a semiconductor substrate side arranged on a packaging base side, a semiconductor junction plane, a side surface which is roughly orthogonal to the semiconductor junction plane, and a facing surface which faces the side surface, wherein the facing surface is partially or completely inclined to reflect the output light from the laser diode incident from the side surface to the semiconductor junction plane of the light detector.

Optical transmitter having photodiode

The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state. Thereafter, the switching layer maintains the high-resistance state when the applied voltage decreases beyond the second threshold value.

Switching element and method of making the same

An organic EL device includes a lower electrode formed on a substrate; an organic EL layer formed on the lower electrode; an upper electrode formed on the organic EL layer; a sealing member for sealing the lower electrode, organic EL layer and upper electrode on the substrate. The sealing member is made of an aluminum material coated with an insulating layer in its inner surface. Since the inner surface of the sealing member is coated with the insulating layer, contact of the sealing member with the upper electrode produces no trouble. Since the surface of the insulating layer is porous, by removing the gas from the surface of the insulating layer , impurities in the internal space can be taken into a large number of pores of the insulating layer . In such a configuration, a thin-profile and reliable organic EL device can be provided which can be manufactured with improved efficiency of manufacture and at reduced production cost.

Organic EL device and method of manufacturing the same

It is an object of the present invention to provide a surface light-emitting device that can realize a lightweight and compact-profile optical input/output device with reasonable price, especially the one that emits light. The beam generator comprises a surface light-emitting device having a stacked-layer formed of a cathode , a luminescent layer made of organic material(s) and an anode in that order, the stacked-layer being located adjacent to a glass substrate . The anode is a transparent electrode that is formed to correspond to a hologram pattern of a condensing lens. When a DC voltage is applied between the cathode and the anode with the DC power source, the luminescent layer illuminate corresponding to the hologram pattern of the condensing lens, and the light will converge to a focal point of the condensing lens. Therefore, the surface light-emitting device can play the both roles of the light source and the condensing lens. Thus, the use of this surface light-emitting device permits realization of a lightweight and compact-profile beam generator with reasonable price.

Surface light emitting devices

A light source device for a laser beam printer in which a semiconductor laser is driven with a pulse current having a minimum pulse width at the ON time on the order of milliseconds or less is provided, wherein the semiconductor laser is formed so that either the rate of change at the rise portion of the pulse current becomes &plusmn;8% or less or the semiconductor laser is excited in a multiple mode in the vicinity of the threshold value of the oscillation, and the semiconductor laser oscillates in a single mode at a current separated from the threshold value, by adjusting of at least one of the width w of a stripe groove ( ) of the current block layer, the composition of clad layers ( ), the distance d between the current block layer ( ) and the active layer ( ), the composition of the current block layer ( ) and the formation of a light absorption layer into the current block layer ( ). As a consequence, in the case where the light source device for the laser beam printer is driven with a short drive pulse on the order of several hundred micro seconds, the light source device becomes such that a transient phenomenon is not generated at the time of the rise of the pulse and a stable light output can be obtained.

Light source device for laser beam printer

A cathode electrode, an organic EL layer, an anode electrode, and a color filter are formed in this order on a glass substrate. Light from the organic EL layer is emitted from the side of the anode electrode, through the color filter. The color filter is formed after forming the anode electrode, the organic EL layer, and the cathode electrode, so that it does not have to be made of a material that can withstand the conditions (e.g. temperature) for forming the anode electrode, the organic EL layer, and the cathode electrode. Since it is not necessary to provide the organic EL layer on top of the color filter with its large level differences, variations in the film thickness of the organic EL layer are eliminated, and light emission irregularities can be prevented.

Organic electroluminescent device with color filter entirely covering flat organic electroluminescent layer

A light emitting portion ( ) and an objective lens ( ) for collecting a light of the light emitting portion are provided. The light receiving portion ( ) is provided in the vicinity of the light emitting portion ( ) such that the light can be collected by the objective lens and the light reflected by an optical disk ( ) to be an object can be detected. The light emitting portion and the light receiving portion are formed to get in a range of 1.22 &lgr;/NA (beam waist BW) wherein a numerical aperture of the objective lens is represented by NA and a wavelength of the light emitting portion is represented by &lgr; or the light receiving portion is multi-split such that a focal shift of a beam having an astigmatism formed thereon can be detected. As a result, it is possible to obtain a light receiving and emitting compound element capable of surely detecting a focal position without adjusting a positional relationship between the light emitting portion and the light receiving portion and an optical pick-up device capable of being easily assembled and of detecting and correcting a shift in a focus or a tracking with a high sensitivity.

Light receiving and emitting compound element and optical pick-up device using the same

A sheet-like display medium includes a switching layer containing a switching material having a light absorption spectrum which changes in a visible light range when a voltage no less than a threshold value is applied while also maintaining the changed light absorption spectrum even after the voltage application is interrupted, and an electrode layer laminated on the switching layer. The switching material may be an organic metal complex such as Cu-TCNQ or Ag-TCNQ.

Sheet-like display medium including switching layer, and display element and device utilizing the same

On an uppermost plane of a glass substrate , a lower electrode and a upper electrode with an organic EL layer intervening therebetween are laminated in an orthogonal manner. The lower electrode , upper electrode and an organic EL layer have a width W&equals;10 nm, respectively. In this configuration, a light source with a minute light-emitting region having an area of 10 nm&times;10 nm can be obtained. The glass substrate is formed as a multi-stage structure so that the light-emitting region can be placed at a position close to an object. Thus, a simple light source which can be used near field optics is provided.

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Kyoto, Japan

Haruo Tanaka