Fujitsu Corporation

Haruo Tamada

Hiroshi Nishimoto

Masahiro Sugimoto

Tadashi Okiyama

Shinji Emori

Akira Miyauchi

Hiroo Kitasagami

Osamu Kudo

Hiromu Iwamoto

An integrated circuit device including: at least one semiconductor chip (3) having a plurality of circuit elements; a package (21 to 24) enclosing the semiconductor chip with a hermetic seal; and a strip line unit (15-2, 11-1b, 11-2, 20 and 23:15-1, 11-1, 11-2, 11-3, 12-1 and 20) for connecting the circuit elements in the semiconductor chip to circuit outside of the package. The stripline unit having a microstrip line structure and a triplate strip line structure serial-connected to the microstrip line structure and connecting the outside circuits. The triplate strip line structure has a characteristic impedance equal to that of the microstrip line structure so that the strip line unit satisfies the required impedance matching. A center of the conductive layer strip line of the triplate strip line structure has a smaller width than that of a microstrip line of the microstrip line structure to have a predetermined impedance so that the triplate strip line structure has a same characteristic impedance as that of the microstrip line structure.

Integrated circuit device having strip line structure therein

An integrated circuit device including a stacked layer unit having a plurality of stacked layers each having an insulation layer and at least one conductive layer strip formed on a surface of the insulation layer, and at least one chip mounted on the top of the insulation layer and having a plurality of circuit elements. The IC device also includes at least one first conductive member formed in the stacked layer unit, having a low inductance for first signals applied thereto and operatively connecting the first signals to be transferred between the circuit elements. The IC device further includes at least one second conductive member formed in the stacked layer unit, having a higher inductance for the first signals than that of the first conductive member and operatively connecting second signals to be transferred between the circuit elements the stacked layer unit, the chip, and the first and second conductive members are enclosed by a package and sealed with a hermetic seal.

Integrated circuit device having stacked conductive layers connecting

A semiconductor device provided with signal lines which connect a chip, provided at a top portion of a package, with external terminals provided at a bottom portion of the package. The signal lines have portions formed along side surfaces of the package. Ground surfaces are formed at predetermined distances on two sides of the high-speed signal lines. A coplanar waveguide is formed by the high-speed signal lines and the ground surfaces, so the impedance of vertical portions of the high-speed signal lines is matched to the circuits connected thereto.

Semiconductor device

A D/A converter of the resistor ladder type provided with full-scale switching circuits between the output terminal of the series connected resistors and ground for selecting the value of resistance of the full-scale control resistor, thereby selecting the value of the full-scale voltage.

Scale switchable digital-to-analog converter

A differential amplifier, which is associated with a digital-to-analog converter and a register and serves as an element of an analog-to-digital converter, having the offset input voltage characteristic determined by selecting, for example, the ratio of the emitter areas of a first pair of transistors so that no offset characteristic is required for the digital-to-analog converter associated with the differential amplifier. The offset input voltage can also be determined by selecting the ratio of the emitter areas of a second pair of transistors each one of the second pair of transistors connected to a different one of the first transistors and each one of the second pair of transistors having a current source of the same magnitude. The offset characteristic can also be determined by selecting unequal magnitudes of the current sources connected to the second pair of transistors when the ratio of the second pair of transistor emitter areas are equal. The offset characteristic can also be selected by selecting both the second pair of transistors emitter areas ratios and the second transistor current source magnitudes as not equal or by selecting any combination of the above current magnitudes or emitter area ratios.

Growing community of inventors

Yokohama, Japan

Haruo Tamada