Kabushiki Kaisha Toyoda Jidoshokki Seisakusho

Kabushiki Kaisha Toyota Jidoshokki

Kabushiki Kaisha Toyota Chuo Kenkyusho

Haruo Takagi

Shinobu Aoki

Hiroshi Tadano

Takashi Suzuki

Yukihiko Watanabe

Hidehito Kubo

Shogo Mori

Masahiko Kimbara

Keiji Toh

Takanori Okabe

Susumu Sugiyama

Daizo Kamiyama

Takamasa Nodo

A surface mounting structure for a surface mounting electronic component has an electronic component, a land, a wiring, and an electrical connection pattern. The electronic component has electrodes at opposite ends thereof. The land is connected to each electrode through a solder. The wiring is connected to the land and has a width which is smaller than a width of the electronic component in a width direction thereof. The wiring is connected to the electrical connection pattern. The electrical connection pattern has on a side on which the wiring is connected to the electrical connection pattern a width which is larger than the width of the electronic component in the width direction thereof.

Surface mounting structure for a surface mounting electronic component

A semiconductor apparatus includes a semiconductor device, a cooler of a forced cooling type, and a heat mass. Heat generated in the semiconductor device is conducted to the cooler. The heat mass comes into junction with the semiconductor device with solder so as to be thermally combined with the semiconductor device. The heat mass functions also as an electrode.

Semiconductor apparatus and manufacturing method thereof

A static induction type semiconductor device of a surface gate type, includes a source region, gate region and drain region. A channel region is formed between the drain region and the source region, such that when a bias potential is applied between the gate region and the source region, carriers flow to the drain region from the source region via the channel region. A source electrode is provided on the semiconductor layer. A source contact region is provided between the source electrode and the source region to establish electrical connection therebetween. The source contact region is segmented into a plurality of smaller regions or sections whose total area is smaller than the area of the corresponding portion of the source region, for improving the current gain, and for preventing or significantly reducing local current concentration.

Static induction type semiconductor device with multiple source contact

A static induction transistor has a gate region formed with a protrusion extending toward a drain region. The protrusion is located toward one side of the gate region such that a shallower gate region lies between the protrusion and the nearest source region. When a reverse voltage higher than the withstand voltage is applied between the gate and drain, avalanche breakdown occurs only in a region immediately below the protrusion, and no hot carriers are allowed to flow into a source region. Deterioration of the voltage-withstanding property and destruction of the device is thereby prevented. Another embodiment has a semiconductor region of a first conductivity type formed in a peripheral portion of a semiconductor layer of the first conductivity type in which a plurality of gate regions are disposed and adjacent a first major surface thereof. The distance between the semiconductor region and the nearest gate region is less than the distance between gate and drain regions such that the withstand voltage between the semiconductor region and the nearest gate region is less than that between the gate region and drain region. When a reverse bias voltage higher than a withstand voltage is applied between the gate and drain, the avalanche breakdown occurs only between the semiconductor region and the gate region nearest thereto.

Static induction transistor

A transistor provided with a current detecting function does not need any external resistance to detect current but uses a part of the electrode wiring through which main current flows as a resistance to prevent power loss. It detects the magnitude of main current on the basis of voltage drop caused by the resistance. Further, a stable sense voltage can be obtained without being affected by temperature change and sense voltages caused at the both ends of a sense resistance can be maintained constant with temperature change. Sense voltages can accurately correspond to the magnitude of main current flowing through a main transistor to enable excess current to be detected accurately.

Transistor provided with a current detecting function

A static induction type semiconductor device is used as a power transistor. It is of the surface gate type and is used for providing a high current density. The static induction type semiconductor device provides a plurality of small source regions surrounded by a gate region. According to this structure, the channel region beneath the source region becomes small, thereby increasing the stored carrier density and enabling a large main current to flow when using a small gate current, thereby achieving a high current amplification ratio. Further, when it flows the main current is distributed to the source regions, thus preventing increase in on-voltage.

Growing community of inventors

Kariya, Japan

Haruo Takagi