Nec Corporation

Haruo Sunakawa

Akira Usui

Akitaka Kimura

Masaaki Nido

Atsushi Yamaguchi

Masaru Kuramoto

Akira Sakai

Yoshishige Matsumoto

Masashi Mizuta

Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same

Method for manufacturing group III-V compound semiconductors

A GaN crystal film having a mask patterned in a stripe for forming multiple growing areas on a sapphire substrate and coalesced GaN crystals covering the mask dividing the areas, grown from the neighboring growing areas, comprising defects where multiple dislocations along with the stripe are substantially aligned with the normal line of the substrate, in the crystal areas over the mask, and dislocations propagating in substantially parallel with the substrate surface while, in the vicinity of the areas where the crystals are coalesced over the mask, propagating substantially in the normal line of the substrate surface, and a manufacturing process therefor. According to this invention, there can be provided a GaN crystal film in which strain, defects and dislocations are reduced and which tends not to generate cracks.

GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor

A method of crystal growth of a GaN layer with an extremely high surface planarity over a GaAs substrate is provided, wherein a GaAs substrate is heated to a temperature in the range of 600.degree. C. to 700.degree. C. without supplying any group-V element including arsenic to form a Ga-rich surface on the GaAs substrate, before a first source material including N and a second source material including Ga are supplied along with a carrier gas onto a surface of the GaAs substrate to form a GaN layer over the GaAs substrate.

Method of crystal growth of a GaN layer over a GaAs substrate

A crystal growth method for growing on a gallium arsenide (GaAs) substrate a gallium nitride (GaN) film which is good in surface flatness and superior in crystallinity. According to the method, a GaAs substrate having a surface which is inclined with respect to the GaAs(100) face is used. The inclination angle of the substrate surface is larger than 0 degree but smaller than 35 degrees with respect to the GaAs(100) face. The inclination direction of the substrate surface is within a range of an angular range from the �0,0,1! direction of GaAs to the �0,-1,0! direction past the �0,-1,1! direction and angles less than 5 degrees on opposite sides of the angular range around an �1,0,0! direction of gallium arsenide taken as an axis, or within another range crystallographically equivalent to the range. The GaN layer is formed on the surface of the GaAs substrate preferably by hydride vapor deposition method.

Crystal growth method for gallium nitride films

In a heterostructure III-V nitride semiconductor device, an InP substrate has a surface having a sloped angle of 0.degree. to 16.degree. with respect to a (100) surface thereof. At least one GaN layer is formed on the InP substrate.

Heterostructure III-V nitride semiconductor device including InP

A method of producing n-type III-V compound semiconductor comprises growing a plurality of monolayers of III-V compound semiconductor molecules on a III-V compound substrate; growing a single layer of group VI element on the III-V monolayers so as to occupy the lattice points for group V element by means of Atomic Layer Epitaxy process; decreasing the number of group VI element by exposing the single layer to the gas of group V element; and growing a plurality of monolayers of III-V compound semiconductor molecules on the group VI element-doped layer by means of the Atomic Layer Epitaxy process.

Group VI doping of III-V semiconductors during ALE

An n-type III-V compound semiconductor comprises a plurality of monolayers of III-V compound semiconductor molecules having a layer-by-layer structure of group III element and group V element laminated alternately, and a group VI element-doped monolayer. The group VI element-doped monolayer is inserted into the III-V compound semiconductor molecules by occupying lattice points which were occupied by the group V element. The layers of the semiconductor are grown by Atomic Layer Epitaxy process.

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Tokyo, Japan

Haruo Sunakawa