Hitachi, Ltd.

Hitachi Denshi Kabushiki Kaisha

Nippon Telegraph and Telephone Public Corporation

Hitachi Electronics Co., Ltd.

Haruo Matsumaru

Hideaki Yamamoto

Akira Sasano

Ken Tsutsui

Toshihisa Tsukada

Kazuo Shirahashi

Yuka Matsukawa

Yasuo Tanaka

Toshio Nakano

Hideaki Taniguchi

Mitsuo Nakatani

Michio Tsukii

Eiichi Maruyama

Ryoji Oritsuki

Saburo Oikawa

Tetsuaki Suzuki

Yoshiyuki Kaneko

Tadaaki Hirai

Norio Koike

Michiaki Hashimoto

Tadao Kaneko

Iwao Takemoto

Toshiyuki Akiyama

Toru Baji

Shigeru Shimada

Shinya Ohba

Yoshio Taniguchi

Chushirou Kusano

Makoto Matsui

Akiya Izumi

Yoshio Hatano

Susumu Niwa

Takeo Nishimura

Eiich Maruyama

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al&mdash;Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal line or video signal line

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

Thin film transistor substrate, manufacturing method thereof, liquid

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al--Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal

In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.

LCD device with TFTs in which pixel electrodes are formed in the same

An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided. In such a device structure, in which the spacing between the ITO and the gate electrode can be compacted while ensuring that there are no short-circuits effected between the ITO layer and gate electrode during the manufacture of the LCD device, the gate electrode and, therefore, also the plate (lower) electrode of the capacitor Cadd are first formed, followed by the formation of the AOF layer over the gate electrode and over the plate electrode of the capacitor, respectively. Subsequently, the ITO pixel electrode is formed on the same plane as that of the first conductive layer, corresponding to the gate electrode and plate electrode of capacitor Cadd, and is followed by the formation of a relatively thicker second insulating layer, for example, a nitride insulating layer, on the first insulating layer, namely, the anodized oxide film, and on the pixel electrode. In accordance with this scheme, furthermore, the first insulating layer is formed by anodizing the metal layer constituting the first conductive layer.

Method for making LCD device in which gate insulator of TFT is formed

A method of manufacturing a liquid crystal display substrate, comprising the step of checking the disconnection of a wiring layer formed on a liquid crystal side face of at least one of the transparent substrates which are arranged to confront each other through a liquid crystal. There is added the step of repairing the disconnection by attaching a conductive material to the disconnected portion of the wiring layer. Thus, the disconnection can be repaired remarkably easily and reliably.

Method of repairing a signal line open circuit by connecting each side

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. An alloy of Al containing Ta and Ti is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.

Method of manufacturing a thin film transistor substrate

A liquid crystal display device comprises: a liquid crystal display panel including a liquid crystal interposed between first and second transparent plates; a set of conductive lines disposed on a surface of at least one of said transparent plates; and a set of electrically conductive pads connected to respective first ends of the conductive lines. Each of the conductive lines has a lower layer made of aluminum or aluminum alloy and an upper layer made of a transparent conductive film. The aluminum or aluminum alloy layers in the conductive lines do not extend into any of the layers used to construct the pads. Each pad, instead, is formed of only a transparent conductive film. Additionally, the conductive lines have respective second ends which are commonly connected to a short-circuiting line. Disposed within the line is another electrically conductive pad, constructed in the fashion the pads in the aforementioned set are constructed. The pad in the short-circuiting line advantageously functions to receive test signals from a probe individually input into the pads at the first ends of the conductive lines. A user therefore can identify faulty conductive lines by determining whether test signals input into the pads at the first end of the lines are received at the pad in the short-circuiting line.

Matrix liquid crystal, display device having testing pads of transparent

Liquid crystal display device with TFTS in which pixel electrodes are

Thin film transistor substrate, liquid crystal display panel and liquid

An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode, preferably made of an aluminum film formed over a glass substrate, and a gate insulator preferably made of an upper silicon nitride film and a lower anodized oxide film of the aluminum film. Dummy gate lines DGL are disposed outside the outermost scanning signal line GL, and dummy data lines DDL are disposed outside the outermost video signal line DL so as to prevent breakage of outermost signal lines.

Liquid crystal display device having peripheral dummy lines

A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

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Tokyo, Japan

Haruo Matsumaru