Kabushiki Kaisha Toshiba

Fujitsu Corporation

Fujitsu Semiconductor Limited

Toshiba Infrastructure Systems & Solutions Corporation

Haruo Kojima

Masanori Takahashi

Yuichi Asano

Hidehiko Akasaki

Hiroshi Ohtsubo

Katsunori Wako

Masamichi Fujimoto

Youhei Nagahama

Yuki Yasuda

Akira Takashima

Fumihiko Taniguchi

Tomoyuki Kitani

Yasuaki Asahi

Tooru Tanaka

Koji Honna

Kazuhiro Kanto

Toshihisa Higashiyama

Kazunari Kosakai

A grounding structure of the high-frequency circuit board includes a dielectric substrate, a back surface ground electrode, an upper ground electrode, and a microstripline upper electrode. The dielectric substrate has a first surface and a second surface, and is provided with a first through-hole. A first opening of the first through-hole at the first surface is smaller than a second opening of the first through-hole at the second surface. A first grounding conductor layer is provided in the first through-hole. The back surface ground electrode is provided at the second surface and is connected with the first grounding conductor layer. The upper ground electrode is provided at the first surface and is connected with the first ground conductor layer. The microstripline upper electrode is provided at the first surface.

Grounding structure of high frequency circuit board

A pulse electric power amplification apparatus includes first, second, final-stage and drive amplification devices. In initial stage, the first device in upstream, having a predetermined thermal time constant, receives a high frequency signal while the second device in downstream, having a different thermal time constant, is cascade-connected to it. In final stage, the drive device drives the final-stage device in downstream, which is cascade-connected to the second device. The apparatus further includes a power supply switching circuit, first and second differentiating circuits. The first and second differentiating circuits, having time constants corresponding to thermal time constants of the first and second devices, respectively, receive a pulse signal with which the high frequency signal is modulated. The power supply switching circuit, also receiving the pulse signal, switches a voltage outputted from a positive bias power supply and inputs the switched voltage to the first, second, drive and final-stage devices.

Pulse electric power amplification apparatus

There is provided one exemplary array antenna system having a plurality of arrayed element antennas and transmit/receive modules that are respectively connected with those element antennas and that apply a predetermined phase shift amount to transmitting signals to be supplied to the element antennas and to received signals received by the element antennas, wherein the transmit/receive module has one transmitting path that is connected to first and second element antennas and that amplifies and distributes the transmitting signal to the first and second element antennas after applying a predetermined transmitting phase shift amount and two receiving paths that amplify and apply respectively a receiving phase shift amount to the received signals received from the first and second element antennas.

Array antenna system and transmit/receive module thereof

A transmission and reception module according to one embodiment of the present invention includes an antenna, a transmission circuit, a wave detection circuit, a high-frequency switch, a small-signal high-frequency diode limiter circuit, and a first power amplifier. The antenna transmits a transmission wave, or receives a reception wave. The transmission circuit is connected to the antenna via a circulator and supplies the transmission wave to the antenna. The wave detection circuit is connected to the antenna via the circulator and branches the reception wave received by the antenna to generate a control signal based on one branched reception wave. The high-frequency switch is connected to the wave detection circuit and suppresses a power of the other branched reception wave when the control signal is input thereto. The small-signal high-frequency diode limiter circuit is connected to the high-frequency switch and further suppresses the power of the other branched reception wave output from the high-frequency switch. The first power amplifier is connected to the small-signal high-frequency diode limiter circuit and amplifies the power of the other branched reception wave whose power has been suppressed by the small-signal high-frequency diode limiter circuit.

Transmission and reception module

In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.

Method of manufacturing a semiconductor using a rigid substrate

A transmitting-receiving module of a radar system which is an embodiment of the present invention, includes, a transmitting circuit for sending transmitting RF signal, a three terminal circulator having three terminals and with the first terminal of which is connected a transmitting-receiving antenna, a first RF switch which is connected with the second terminal of the three terminal circulator and the output can be switched over, a second RF switch with input which can be switched over, an attenuator connected between the first RF switch and the second switch, and a receiving circuit connected with the output terminal of the second RF switch, when radar signal is being transmitted, the first RF switch is connected with the attenuator, and the second RF switch is not connected with the attenuator, when radar signal is being received, the first RF switch is connected with the second RF switch directly or connected through a low noise amplifier.

Transmitting-receiving module of radar system

A first power sourcefor supplying a bias voltage to a gate electrode G of a field effect transistor, which amplifies high-frequency signals, and a second power sourcefor supplying a bias voltage to a drain electrode D of the field effect transistorare provided. The protective resistanceis connected between the gate electrode G of the field effect transistorand the first power source, and the bias voltage controlleris connected between the drain electrode D of the field effect transistorand the second power source. Further, a voltage detectoris connected between both ends of the protective resistanceto detect a voltage drop generated between both ends of the protective resistance, when a rectified current flows to the gate electrode G from the drain electrode D of the field effect transistor

Semiconductor amplifier

A switching circuit includes a semiconductor switching element having a control electrode and a source-drain current path, the source-drain current path being connected between a voltage source and a load circuit, a parallel circuit formed by first and second transistors having respective collector-emitter paths connected between the control electrode of the semiconductor switching element and a reference potential point, a first resistor connected to the second transistor in series, a differential circuit connected between a control signal terminal and the base of the first transistor and a second resistor connected between the control signal terminal and the base of the second transistor. The first transistor is made conductive by a signal obtained by differentiating a control signal and subsequently the second transistor is made conductive to control the semiconductor switching element for ON/OFF.

Switching circuit using semiconductor switching element

Method of manufacturing a semiconductor device using a rigid substrate including the vent-end edge portion of the substrate has a thickness smaller than the other portions of the substrate

An amplifier includes a plurality of power amplifier elements connected in cascaded multiple stages, a first bias power supply, a second bias power supply, a switching circuit configured to switch a first output supplied from the first bias power supply in response to a modulation pulse so as to transmit the first output to the plurality of power amplifier elements, a pulse differentiating circuit configured to differentiate the modulation pulse by a given time constant, and an adder circuit configured to add the differentiated modulation pulse and a second output of the second bias power supply so as to transmit the differentiated modulation pulse added to the second output as an input bias voltage to at least one of the plurality of power amplifier elements except for a final stage in the cascaded multiple stages.

Power amplifier with pulse differentiating circuit

A limiter circuit comprises a quarter-wave transmission line, a first limiter element, a first DC return element, a second limiter element and a second DC return element. The quarter-wave transmission line, which has a predetermined characteristic impedance, comprises a signal line conductor and a common line conductor. The first limiter element is connected through a termination between the signal line conductor and the common line conductor at one side of the transmission line. The first DC return element is connected in parallel with the first limiter element. The second limiter element is connected between the signal line conductor and the common line conductor at another side of the transmission line. The second DC return element is connected to in parallel with the second limiter element.

Limiter circuit

A microwave integrated circuit, includes: a dielectric substrate having a signal line on a front surface of the dielectric substrate and a mount pad disposed adjacent to an end of the signal line in a longitudinal direction of the signal line; a semiconductor chip having an upper electrode and a lower electrode provided on opposite surfaces of the semiconductor chip, the lower electrode being mounted on the mount pad; a bonding block connecting a bottom surface of the bonding block to the end in the longitudinal direction of the signal line; and a wiring member configured to bond the upper electrode of the semiconductor chip and a top surface of the bonding block together.

Microwave integrated circuit

The semiconductor device includes a semiconductor chip, an FPC tape for mounting the semiconductor chip thereto, a mold resin for protecting the semiconductor chip, and metal balls provided on the FPC tape for connecting the semiconductor chip to a circuit board. The mold resin has the glass transition temperature not lower than 200.degree. C., the coefficient of linear expansion in the range from 13 to 18 ppm/.degree. C., and Young's modulus in the range from 1500 to 3000 kg/mm.sup.2, whereby warpage of the semiconductor device is mitigated. The semiconductor device can also include a buffer layer. The semiconductor device can be manufactured by collectively molding a plurality of semiconductor chips mounted to the FPC tape and by cutting the molded article into individual semiconductor packages.

Resin molded semiconductor device and method of manufacturing

A semiconductor device comprises a dielectric substrate formed on a metal carrier, a semiconductor chip formed on the dielectric substrate and having a first electrode, a microstrip line formed on the dielectric substrate and having a second electrode to be connected to the first electrode, and wires, having different lengths, for connecting the first and second electrodes.

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Kawasaki, Japan

Haruo Kojima