Fujitsu Corporation

Haruo Kawata

Toshiro Futatsugi

Tsukasa Onodera

Hidetoshi Nishi

In a semiconductor integrated circuit device, a plurality of a field effect transistors are formed on a (110) crystal surface of a group III-V compound semiconductor substrate having a zinc blend type crystal structure.

Semiconductor integrated circuit device

An IC device comprising a plurality of FET's using a compound semiconductor, more specifically, a zincblende type semiconductor substrate, having a surface of a (111) plane. By use of this plane, differences of characteristics of the FET's depending on directions along which gates of the FET's are arranged when the gate length is made shorter are prevented, allowing arrangement of gates of the FET's in different directions, particularly perpendicular to each other, with making the gate length shorter to miniaturize and densify the device.

Compound semiconductor integrated circuit device

High transconductance is obtained in GaAs FET's by forming a channel layer having a carrier concentration monotonously decreasing from the interface of the channel layer and a control gate toward the interface of the channel layer and the substrate it is formed in. This is established by ion implantation of the channel layer through an insulating layer, preferably an AlN layer, on a GaAs substrate. An AlN layer is preferable since it has no adverse effects on the GaAs substrate during ion implantation and the following heat treatment, allowing higher uniformity of the threshold voltages of the FET's.

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Atsugi, Japan

Haruo Kawata