Fuji Electric Co., Ltd.

Fuji Electric Holdings Co., Ltd.

University of California

III Holdings 1, LLC

III Holdings 2, LLC

Fuji Electric Imaging Device Co., Ltd.

Haruo Kawakami

Yasushi Ogimoto

Hisato Kato

Nobuyuki Sekine

Keisuke Yamashiro

Kyoko Kato

Eiki Adachi

Masami Kuroda

Makoto Kobayashi

Yotaro Shiraishi

Motohiro Takeshima

Yang Yang

Masao Yamada

Takahiko Maeda

Takuji Iwamoto

A spin valve element may include a plurality of magnetic element groups. Each magnetic element group may be formed, at least in part, by a plurality of magnetic elements being connected in parallel. Each magnetic element may include an intermediate layer and a pair of ferromagnetic layers sandwiching the intermediate layer. The plurality of magnetic element groups may be connected together in series or in parallel. The plurality of magnetic elements may be configured to undergo a microwave oscillation and are placed in proximity sufficient that oscillation signals are configured to be generated with the magnetic elements mutually synchronized. The proximity may include a range equal to a wavelength of the microwave oscillation.

Spin valve element and method of manufacturing same

A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.

Process for producing thin film field-effect transistor

A spin valve element including parallelly or serially connected magnetic element groups, each magnetic element group having a plurality of magnetic elements that each include an intermediate layer of an insulating member or a nonmagnetic member sandwiched by a pair of ferromagnetic layers. The plurality of magnetic elements are further connected either in series or in parallel.

In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.

Magnetic memory element, driving method for same, and nonvolatile storage device

A spin-valve element has a pair of ferromagnetic layers having mutually different coercive forces, sandwiching an insulating layer or a nonmagnetic layer therebetween. The in-plane shape of the spin-valve element is substantially circular in shape but is provided, in the peripheral portion, with a plurality of cutouts N, N, N, N. Preferably, the shape of at least one cutout be made different from that of others. Moreover, a storage device that employs such a spin-valve element is provided.

Spin-valve recording element and storage device

Provided is a spin valve element capable of performing multi-value recording, which includes a pair of ferromagnetic layers having different coercivities from each other, and sandwiching an insulating layer or a non-magnetic layer. The ferromagnetic layer having the smaller coercivity has a substantially circular in-plane profile, and a plurality of island-shaped non-magnetic portions I, I, I, and Iare included. In addition, a storage device is manufactured by using such a spin valve element.

Spin valve element, method of driving the same, and storage device using the same

A method for driving a spin valve element, including passing driving current through the spin valve element to generate an oscillation signal, and performing amplitude modulation of the driving current at a frequency lower than the oscillation frequency of oscillation signals. This amplitude modulation can be ON-OFF modulation, and the interval tin the conducting state of the ON-OFF modulation is made to satisfy the relation t&#x3c;D/&#x3b1;, where &#x3b1; is the thermal diffusivity of the heat diffusion portion, and D is the thickness of the heat diffusion portion.

Spin valve element and method of driving same

A magnetic memory element () for use in a cross-point type memory is provided with a spin valve structure having a free layer (), a nonmagnetic layer (), and a pinned layer (). The magnetic memory element is also provided with another nonmagnetic layer () on one surface of the free layer (), and furthermore, a magnetic change layer () whose magnetic characteristics change depending on temperature so as to sandwich the nonmagnetic layer () with the free layer (). In the magnetic change layer (), the magnetization intensity increases depending on temperature.

Magnetic memory element, driving method for the same, and nonvolatile storage device

A logic circuit includes two two-terminal switching devices and receives first and second pulses as inputs. Each of the two devices has two different stable resistivity values for each applied voltage that is greater than a first threshold voltage (Vth) and is smaller than a second threshold voltage (Vth) that is larger than Vth. Each switching device, when a voltage less than or equal to Vthis applied, becomes in a first state having the higher resistivity of the two resistivity values, whereas when a voltage more than or equal to Vthis applied, becomes in a second state having the lower resistivity of the two resistivity values. The two devices are connected in series in a direction with uniform polarity to each other. The first and second states are selectively generated in the first and second devices by a combination of inputs of the first and second pulses.

Logic circuit

The invention includes a two terminal switching device having two stable resistivity values for each applied voltage, which when a voltage of not more than a first threshold voltage (Vth) is applied, becomes in a first state having a higher resistivity, whereas when a larger second threshold voltage (Vth) or more is applied, becomes in a second state having a lower resistivity; a resistance connected in series to the switching device; a terminal for applying a bias voltage (Vt) to both ends of a series circuit of the switching device and the resistance; a first pulse inputting terminal; and a second pulse inputting terminal. The invention provides a simple realization of a flip-flop circuit for a sequential logic circuit.

A spin valve element driving method, and a spin valve element employing such a method, for causing microwave oscillation in a spin valve element. The spin valve element includes an intermediate layer and a pair of ferromagnetic layers including a fixed layer and a free layer sandwiching the intermediate layer, the fixed layer having a higher coercivity than the free layer, and being magnetized in a direction substantially perpendicular to a film plane thereof. The method includes a driving step of passing current from one of the pair of ferromagnetic layers to the other through the intermediate layer.

Spin valve element driving method and spin valve element

A logic circuit with a simple configuration and good current efficiency is provided. The logic circuit includes a two-terminal bistable switching element () having characteristics which maintain states, a first switching element () one end of which is connected to one terminal of the two-terminal bistable switching element (), a second switching element () one end of which is connected to the other terminal of the two-terminal bistable switching element () via a resistance element (), and first and second pulse input terminals () respectively connected to the one terminal and the other terminal of the two-terminal bistable switching element (). A bias voltage is applied across the other end of the first switching element () and the other end of the second switching element (), and a trigger pulse is input from the first and second pulse input terminals ().

Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: InMZnSnO(wherein M is Ga or Al, 0&#x2266;x&#x2266;1, &#x2212;0.2&#x2266;y&#x2266;1.2, z&#x2267;0.4 and 0.5&#x2266;(x+y)/z&#x2266;3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.

Oxide semiconductor, thin-film transistor and method for producing the same

A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticle and the organic bistable compound.

Switching element

The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150&#xb0; C.

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Miura, Japan

Haruo Kawakami