Hitachi, Ltd.

Director-general of the Agency of Industrial Science and Technology

Hitachi Microcomputer System, Ltd.

Haruo Itoh

Toshikazu Shimada

Akio Saito

Tetsuhiko Takahashi

Tadaaki Hirai

Kenichi Okajima

Sunao Matsubara

Shin-ichi Muramatsu

Katsuhiko Itoh

Nobuo Nakamura

Minoru Yoshida

Takao Satoh

Hideaki Yamamoto

Kazutaka Tsuji

Yukio Takasaki

Hitoshi Oka

Hiroshi Takeuchi

Kenji Maio

Tadashi Saitoh

Katsumi Tokiguchi

Sukeyoshi Tsunekawa

Terunori Warabisako

Yoichi Takahara

Michimasa Funabashi

Takashi Tokuyama

Katsuhiro Ota

Maki Shimoda

Kazuhiko Kawai

Hirosh Takeuch

Tetshuhiko Takahashi

Koutarou Koizumi

Shinichi Muramatsu

By employing a cleaning method wherein a substrate such as Si wafer is covered with a film having electrostatic repulsive force or a substance capable of controlling a zeta potential so as to prevent or remarkably reduce adhesion of fine particles present in a cleaning solution or etching solution, electronic parts can be produced in higher yield and lower cost.

Semiconductor cleaning and production methods using a film repulsing

A highly clean fluid treatment system having a small system volume is provided by using a Bernoulli holder to accomplish stable holding of a specimen in a simple configuration. A holder having a specimen hold face formed almost the same as a specimen or having a Bernoulli effect producing region and a region surrounding the Bernoulli region made of a specific combination of materials is used and fluid supply sources are connected to the holder for supplying one or more fluids containing a treatment agent of a specimen. Since a force for inhibiting a position shift occurs on the end face of the specimen 10, stable specimen holding is enabled. The space between the specimen and the holder where treatment is executed is narrow and fluid always flows from the treatment space to the outside. Therefore, the fluid treatment system of a small volume producing high treatment efficiency and minimizing the chances of recontamination of the specimen can be provided.

Specimen holding method and fluid treatment method of specimen surface

According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.

Removal method of organic matter and system for the same

Photo-sensor and method for operating the same

This invention relates to a multi-element type radiation detector for an X-ray CT scanner system wherein a plurality of scintillator blocks that are isolated either optically or radiation-wise from one another are arranged integrally, and a photo-diode consisting of an amorphous silicon layer for converting the emission of each scintillator is formed on the surface of each scintillator block by thin film technique.

Multi-element type radiation detector

In a radiation detector having a scintillator and a photodiode in combination, an amorphous silicon diode of a refractive index of 3.5 or below is used for a photodector to have a decreased junction capacitance. This shifts the spectral sensitivity characteristic of the photodetector toward the short wavelength side, thus providing a low-noise, high-sensitivity radiation detector matched well with the emission spectrum of the scintillator.

Radiation detector

A solar cell including at least a thin film formed of an amorphous silicon material and having p-type conductivity. The thin film comprises a multi-layer structure including at least one non-doped layer formed of a material of an amorphous silicon material and having a thickness of 10 to 300 .ANG. and at least one p-type doped amorphous silicon layer of a given thickness. The p-type doped amorphous silicon layer is stacked such that at least one face thereof is in contact with said at least one non-doped layer of amorphous silicon material so that the thin film of multi-layer structure exhibits in effect p-type conductivity.

Solar cell

A plurality of photovoltaic devices (e.g., solar cells) connect with each other and form a photo-electric conversion apparatus. The photovoltaic devices concerned are so connected with each other that when a given pattern of light is irradiated upon the photo-electric conversion apparatus concerned, the electrical output generated when the whole of it is irradiated is smaller than that generated when some parts of it are irradiated. Since an electronic system equipped with this apparatus as a power supply can be designed to work when the apparatus is irradiated with such a pattern of light that irradiates only a part of the apparatus, an electronic system having such an identifying faculty can be made easily. Further, an apparatus like this type may be made by connecting the elements of this apparatus in series or in reverse direction to form units, and by connecting this plurality of units in series and/or in parallel.

Photo-electronic conversion apparatus with light pattern discriminator

A non-mass-analyzed ion implantation process wherein two or more species of ions of the same polarity having greatly different ion masses are generated from a compound source material, the ions are accelerated under the application of an electric field, and the accelerated ions are scanned under the application of a magnetic field so as to be implanted into a target at a distribution profile which varies with the species of ions. An ion implantation apparatus can be simplified. A large ion beam current with a large spot size can be used and ions can be implanted to the target at a large dose within a short time. Especially, the non-mass-analyzed ion implantation is advantageously utilized for production of solar batteries.

Non-mass-analyzed ion implantation

Growing community of inventors

Hino, Japan

Haruo Itoh