Tokyo Electron Limited

Tokyo Electron Kabushiki Kaisha

Shin-etsu Chemical Co., Ltd.

Harunori Ushikawa

Atsushi Sato

Masayuki Kitamura

Junichi Arami

Nobuo Kawada

Tomohisa Shimazu

Kenji Ishikawa

Yusuke Muraki

Hiroshi Mogi

Tetsu Oosawa

Kenji Tago

Eiichiro Takanabe

Keizo Hosoda

Junichi Kobayashi

Isao Yanagisawa

Rapid thermal nitridation is carried out to form a nitride film on a lower electrode which is made of silicon, and a tantalum oxide dielectric film is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the dielectric film and the nitride film, thus an oxide film is formed between the lower electrode and the nitride film. Further, silicon which is not bonded to nitrogen in the nitride film is oxidized, thus an oxide film whose effective thickness is equal to or greater than 2 nm. The oxidization also recrystallizes the dielectric film. Finally, an upper electrode is formed, and the capacitor is completed.

Capacitor for analog circuit, and manufacturing method thereof

Method and device for treating semiconductor with treating gas while

The process chamber of a thermal CVD apparatus for a semiconductor wafer W has flooring and ceiling plates made of quartz. Lower and upper heaters are arranged behind the flooring and ceiling plates. The supply for supplying a process gas into the process chamber has a shower head directly under the ceiling plate, an outer tube surrounding the shower head, and radial tubes connecting the outer tube and the shower head. The shower head is made of quartz, and its top bottom and top plates can transmit radiation heat from the upper heater.

Single-substrate-processing apparatus in semiconductor processing system

Transfer apparatus, transfer method, treatment apparatus and treatment

A heating device is formed by a heating plate formed of silica and having a heating surface for heating an object to be heated, a heating element having a predetermined pattern and fixed to a surface opposing the heating surface of the heating plate, and a reflecting plate formed of silica and brought into tight contact with the surface of the heating plate on which the heating element is formed. This heating device is arranged in a processing vessel in a CVD apparatus, and a semiconductor wafer is placed on the heating device. A process gas is supplied into the processing vessel while the semiconductor wafer is heated, thereby forming a predetermined film on the semiconductor wafer.

Heating device, method of manufacturing the same, and processing

A heat treatment apparatus comprising a reaction vessel located in a vertical furnace, and a ladder boat for mounting a plurality of semiconductor wafers one above another in parallel with each other. A vertical mounting pitch of mounting the wafers on the ladder boat is set at, e.g., 40 mm. When a treatment temperature is 1000.degree. C., intra-surface temperature differences of the wafers, objects to be treated, can be suppressed to 10.degree. C. at the time of passing 900.degree. C. even when 600.degree. C. is raised to 100.degree. C. at a 100.degree. C./min rate, whereby no slip occurs in large-diameter semiconductor wafers of an above 250 mm diameter even with high temperature increases at high rates in heat treatments, as of oxidation, diffusion, etc.

Heat treatment process for preventing slips in semiconductor wafers

A waiting space is provided below a processing vessel for processing objects to be processed. An objects to be processed mount which is movable up and down into the processing vessel is disposed in the waiting space for mounting objects to be processed. There is provided a natural oxide film generation suppressing gas supply system which supplies a natural oxide film generation suppressing gas for suppressing generation of natural oxide films on the surfaces of the objects to be processed, and a dried gas with a low dew point is supplied as a natural oxide film generation suppressing gas by the natural oxide film generation suppressing gas supply system. The processing apparatus can suppress generation of natural oxide films inexpensively and efficiently.

Processing apparatus

A treating device of the closed system structure in which semiconductor wafers are conveyed from a load lock chamber to a process tube comprises a gas feed pipe for feeding inert gas into a load lock chamber, and a gas circulating cleaning system which lets out the inert gas in the load lock chamber, removes gaseous impurity and particulate impurities in the let out gas by a gas cleaning filter, and returns the cleaned gas into the load lock chamber. Thus, ambient atmosphere of the inert gas in the load lock chamber can be maintained at high purity, a consumption amount of the inert gas can be small, which contributes to suppression of generation of particles and preclusion of chemical contamination. The treating device can have high achievement and can be economical.

Treating device

A heat treatment apparatus for transferring a semiconductor wafer between a cassette and a boat and heat-treating a number of wafers loaded on the boat, comprising wafer holding assembly for supporting the wafer, and a plurality of posts for supporting the wafer holding assembly at predetermined intervals. The wafer holding assembly includes a ring member having an outside diameter larger than the diameter of the wafer and supported at a part of a peripheral portion thereof by the posts, and a plurality of supporting pieces provided onto the ring member, for supporting the wafer directly in contact with the wafer.

Heat treatment apparatus having a wafer boat

Phosphor-doped silicon films are simultaneously formed on semiconductor wafers, respectively. The semiconductor wafers are contained in a reaction tube whose interior temperature is controlled to 500.degree. C. Si.sub.2 H.sub.6 and PH.sub.3 are introduced into the reaction tube. PH.sub.3 is preheated to 400.degree. C. in a gas activating unit before being introduced into the reaction tube. By virtue of the preheating, the thermal decomposition of PH.sub.3 carried out in the reaction tube is accelerated.

Method of forming a phosphorus doped silicon film

Si.sub.2 H.sub.6 and PH.sub.3 are introduced into a heated reaction tube in which a plurality of substrates are contained under vacuum pressure, thereby forming phosphor-doped silicon films on the substrates. By changing the flow of Si.sub.2 H.sub.6, a first layer consisting of a silicon film containing phosphor of low density, a second layer substantially consisting of phosphor, and a third layer consisting of substantially the same composition as that of the first layer are deposited in the order mentioned. Thereafter, the first through third layers are heated, thereby diffusing phosphor contained in the second layer. Thus, an integral film of uniform impurity density is formed from the first through third layers.

Growing community of inventors

Sagamihara, Japan

Harunori Ushikawa