Sony Semiconductor Solutions Corporation

Haruko Takahashi

Masami Kuroda

Midori Aizawa

Hiroyuki Tezuka

A leakage current of a MOS transistor that performs writing is reduced. The resistance change memory includes a memory cell, a write drive unit, a write control unit, and a well potential adjustment unit. The memory cell includes a resistance change element. The write drive unit applies a write voltage to the memory cell to perform writing of data. The write control unit outputs a write control signal for controlling the writing to the write drive unit. The well potential adjustment unit adjusts a well potential of a well region in which an element constituting the write drive unit is arranged according to the write voltage at time of the writing.

Resistance change memory, memory device, and memory system

A logic simulation device according to an aspect of the present disclosure includes an operation model of a resistance-change memory element. The resistance-change memory element is provided between two terminals. The operation model includes a register section for holding data, a truth table, and a determining section. The truth table defines a relationship between signal values of the two terminals, and data writing to the register section and data reading from the register section. The determining section performs determination about the data writing and the data reading on the basis of signal values inputted to the two terminals and the truth table.

Logic simulation device

A memory system according to an aspect of the present disclosure includes a soft error generator that generates write data or read data considering a probability error by using a specific number as a random number. In the memory system, the write data or the read data considering a probability error is generated by using the random number. Herein, whether or not an error occurs is randomly changed depending on the random number. Accordingly, an error stochastically occurs, which makes it possible to reproduce a soft error.

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KANAGAWA, Japan

Haruko Takahashi