Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kogakuin University

Toshiba Memory Coporation

Haruko Akutsu

Kyoichi Suguro

Toshihiko Iinuma

Yoshimasa Kawase

Akira Kuramoto

Toma Yorisaki

Reiko Saito

Takeshi Murakami

Tsukasa Nakai

Atsushi Murakoshi

Takahiro Ikeda

Hiroshi Itokawa

Tetsuo Sakamoto

Jun Hirota

Makiko Katano

Akio Takano

Katsumi Rikimaru

Tatsuya Shima

According to one embodiment, a mass spectrometer includes a sample stage provided to hold a sample; an analysis unit disposed to face a sample placement surface of the sample table, and performing mass analysis; an ion beam source provided to irradiate an ion beam toward the sample placement surface; an assist energy source supplying assist energy to a target area between the sample placement surface and the analysis unit; and a laser light source irradiating the target area with laser light.

Mass spectrometer and mass spectrometry method

According to one embodiment, an atom probe inspection device includes one or more processors configured to change a two-dimensional position of a detected ion, detect two-dimensional position information of the ion and a flying time of the ion, identify a type of an element of the ion, generate first information under a first condition and second information under a second condition, and generate a reconstruction image of the sample from the first information and the second information.

Atom probe inspection device, field ion microscope, and distortion correction method

A mass spectrometer includes a beam radiator radiating a beam to a sample. A laser radiator radiates laser light onto an irradiation surface of a surface of the sample irradiated with the beam or above the irradiation surface. The laser radiator splits the laser light into at least first light and second light. The laser radiator adjusts a polarization state, a length of an optical path, or a direction of the optical path of at least either the first light or the second light to condense the first light and the second light onto the irradiation surface or above the irradiation surface. A detector detects particles discharged from the sample.

Mass spectrometer performing mass spectrometry for sample with laser irradiation

A scanning probe microscope that includes a probe, a positioning unit configured to position a probe on a measurement sample, an excitation unit configured to excite the measurement sample at a predetermined frequency, a resonance unit configured to output a frequency modulation signal by converting a change of a capacitance of the measurement sample, a lock-in amplifier configured to output a differential capacitance signal obtained by extracting a predetermined frequency component and a harmonic component of the predetermined frequency of the demodulated signal, a conversion unit configured to output data indicative of a relationship between a voltage applied to the measurement sample and the capacitance, a detecting unit that detects a voltage value corresponding to a feature point of the relationship data, and a main measurement control unit that measures electrical characteristics of the measurement sample subjected to a DC bias voltage substantially equal to the feature point voltage.

Scanning probe microscope and measurement method using the same

In accordance with an embodiment, an analytical apparatus includes a member, a voltage source connected to the member and a detecting section. The member has an inserting portion into which a sample holder supporting a sample is insertable and whose shape corresponds to a shape of the sample holder. The detecting section is configured to detect a substance to be emitted from the sample by field evaporation. The shape of the inserting portion in a cross section of a direction perpendicular to an inserting direction of the sample holder is a shape excluding a perfect circle.

Analytical apparatus, sample holder and analytical method

A sputter neutral particle mass spectrometry apparatus includes a sample table holding a sample which is a mass spectrometry target, an ion beam irradiation device which irradiates an ion beam on the sample held by the sample table to generate neutral particles in an adjacent region of the sample, a light beam irradiation device which irradiates a light beam on the neutral particles positioned in the adjacent region to obtain photoexcited ions, a draw-out electrode which draws out the photoexcited ions, a mass spectrometer which draws in the drawn out photoexcited ions to perform mass analysis, and an optical element which is provided in a light path after the light beam passes the adjacent region, and changes a traveling direction of the light beam so that the light beam passes the adjacent region again.

Sputter neutral particle mass spectrometry apparatus with optical element

A material inspection apparatus according to the present embodiment includes a sample mount capable of mounting a sample. A detector detects an atom desorbed from the sample. A voltage generator applies a voltage to the sample. A laser generator irradiates a laser beam onto the sample. An arithmetic part processes a detection result of the detector. A storage part stores a detection prediction range of a certain element and an isotope of the certain element. A display displays the detection prediction range and an actual detection result of the detector in a comparable manner.

Material inspection apparatus and material inspection method

In accordance with an embodiment, a sample structure analyzing method includes generating a beam and then applying the beam to a plurality of observation regions on a sample, and acquiring a plurality of diffraction images from the beam which has passed through the sample; and comparing the acquired diffraction images, and judging the difference between the observation regions from the comparison result, or identifying the grain boundary of crystal constituting the sample.

Sample structure analyzing method, transmission electron microscope, and computer-readable non-transitory recording medium

In accordance with an embodiment, a sample analyzing apparatus includes a charged beam generating unit, a detecting unit, and an analyzing unit. The charged beam generating unit is configured to generate a charged beam and apply the charged beam to a sample. The detecting unit is configured to detect charged particles and then output a signal, the charged particles being generated from the sample by the application of the charged beam in a manner depending on a three-dimensional structure and material characteristics of the sample. The analyzing unit is configured to process the signal to analyze the sample.

Sample analyzing apparatus and sample analyzing method

A semiconductor device manufacturing method is disclosed. A silicon-containing gate electrode is first formed above the surface of a silicon-containing semiconductor substrate. Then, a sidewall insulating film is formed on the sidewall of the gate electrode and a film of metal is formed on the semiconductor substrate to cover the gate electrode and the sidewall insulating film. The front and back sides of the semiconductor substrate are heated through heat conduction by an ambient gas. Thereby, the metal is caused to react with silicon contained in the semiconductor substrate and the gate electrode to form a metal silicide film.

Method of manufacture of semiconductor device

A semiconductor device includes a silicon region including Si, and a silicide film provided on the silicon region, the silicide film comprising a compound of Si with Ni, Co, Pd, or Pt and including Er.

Semiconductor device and method for manufacturing the same

An apparatus for evaluating semiconductor material having a pump laser configured to irradiate a pump beam modulated at a modulation frequency on a semiconductor wafer, a probe laser configured to irradiate a probe beam on the semiconductor wafer, and a detector configured to detect a reflection of the probe beam from the semiconductor wafer.

Growing community of inventors

Yokosuka, Japan

Haruko Akutsu