Sandisk Technologies Inc.

Haruki Urata

Michiaki Sano

Kazuto Watanabe

Akira Takahashi

Tae-Kyung Kim

Raghuveer S Makala

Yanli Zhang

Hiroyuki Kinoshita

Jixin Yu

Daxin Mao

Yiyang Gong

Yashushi Ishii

A three-dimensional memory device includes a first alternating stack of first insulating layers and first electrically conductive layers located over a top surface of a substrate, such that each of the first insulating layers and the first electrically conductive layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion, memory stack structures extending through a memory array region of the first alternating stack that includes the horizontally-extending portions of the first electrically conductive layers, such that each of the memory stack structures comprises a memory film and a vertical semiconductor channel, a mesa structure located over the substrate, such that each respective non-horizontally-extending portion of the first insulating layers and the first electrically conductive layers is located over a sidewall of the mesa structure, and contact structures that contact a respective one of the non-horizontally-extending portions of the first electrically conductive layers.

Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same

An alternating stack of insulating layers and spacer material layers is formed over a substrate. Each of the first insulating layers and the first sacrificial material layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion. Memory stack structures are formed through the horizontally-extending portions of the alternating stack. Regions of the non-horizontally-extending portions of the sacrificial material layers are masked with patterned etch mask portions. Unmasked first regions of the non-horizontally-extending portions of the first sacrificial material layers are selectively recessed, and the sacrificial material layers with electrically conductive layers. Each electrically conductive layer can include a vertical plate region and a protrusion region that protrudes above the vertical plate region and having a narrower lateral dimension that the vertical plate region. Metal contact structures can be formed on the protrusion regions without contacting the vertical plate regions.

Three-dimensional memory device containing word lines having vertical protrusion regions and methods of making the same

A three-dimensional memory device includes an alternating stack of L-shaped insulating layers and L-shaped electrically conductive layers located over a top surface of a substrate, such that each of the L-shaped insulating layers and the L-shaped electrically conductive layers includes a respective horizontally-extending portion and a respective non-horizontally-extending portion, memory stack structures extending through a memory array region of the alternating stack that includes the horizontally-extending portions of the L-shaped electrically conductive layers, such that each of the memory stack structures includes a memory film and a vertical semiconductor channel, dielectric spacers non-horizontally extending between neighboring pairs of a non-horizontally-extending portion of an L-shaped insulating layer and a non-horizontally-extending portion of an L-shaped electrically conductive layer, and contact via structures that contact a respective one of the non-horizontally-extending portions of the L-shaped electrically conductive layers.

Three-dimensional memory device having L-shaped word lines and methods of making the same

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Yokkaichi, Japan

Haruki Urata