Toyota Jidosha Kabushiki Kaisha

Haruki Kondoh

Akira Kato

Kazuaki Okamoto

Keiji Kuroda

Hiroshi Yanagimoto

Rentaro Mori

Soma Higashikozono

Kenji Nakamura

Tomoya Okazaki

Jyunya Murai

Koji Inagaki

Provided is a film forming apparatus and a film forming method capable of forming a homogenous metal film by suppressing accumulation of an electrolytic solution between a solid electrolyte membrane and a substrate. A film forming apparatus for forming a metal film includes an anode; a solid electrolyte membrane disposed between the anode and a substrate; a power supply that applies a current between the anode and the substrate; a mount base including a housing recess according to a shape of the substrate that is housed therein; and a housing including a storing chamber that stores an electrolytic solution together with the anode and having the solid electrolyte membrane attached thereto to seal the storing chamber. The mount base includes a liquid discharge portion that discharges the electrolytic solution having passed through the solid electrolyte membrane from a position facing an end face of a side wall of the housing.

Film forming apparatus for forming metal film and film forming method for forming metal film

Provided is a film forming apparatus and a film forming method for forming a metal film capable of reducing the occurrence of discoloring or alteration of the metal film caused by drying of an electrolytic solution remaining on the surface of the formed metal film. A space where the metal film exists is sealed between a housing and a mount base in a state where the solid electrolyte membrane is in contact with the metal film. The film forming apparatus includes a water supply unit supplying a wash water to the sealed space such that the wash water flows onto the surface of the metal film being in contact with the solid electrolyte membrane, and a water discharge unit discharging a wash water from the sealed space such that the wash water having flowed onto the surface of the metal film flows out from the surface of the metal film.

A film formation apparatus includes an anode, a solid electrolyte membrane between the anode and a substrate, a power supply that applies voltage between the anode and the substrate as a cathode, and a liquid reservoir that holds the anode and the solid electrolyte membrane while separating them apart from each other, the liquid reservoir storing electrolyte solution including metal ions between the anode and the solid electrolyte membrane. The solid electrolyte membrane includes a central portion that comes in contact with the substrate and the electrolyte solution, and an outer edge portion outside the central portion. The apparatus includes a membrane tensioning mechanism to apply a tensile force to the central portion toward the outer edge portion while storing the heated electrolyte solution in the liquid reservoir, to elongate the central portion.

Film formation apparatus and film formation method for forming metal film

Provided is a method for forming a metal film using a solid-state electrolyte membrane, and the method allows a metal film having a smooth surface to be formed and an additive to sufficiently serve its function. A method for forming a metal film includes the successive steps of (a) supplying a solution to a solution-housing space, the solution containing ions of the metal and an additive; (b) increasing a pressure of the solution in the solution-housing space in a state where the solution-housing space is uncommunicated with a solution tank and the substrate held by a holder is in contact with the solid-state electrolyte membrane; (c) decreasing the pressure of the solution in the solution-housing space; and (d) forming the film of the metal on the substrate by applying a voltage between an anode and the substrate while the solution is circulated between the solution-housing space and the solution tank.

Method for forming metal film

It is determined whether an imaginary component at a predetermined frequency of an alternating current impedance is equal to or more than a preliminarily set film-formable value or not. The metallic coating is formed in a state where the substrate is pressed by the solid electrolyte membrane when the imaginary component is equal to or more than the film-formable value in the determining. The metallic coating is formed in a state where the pressing of the substrate by the solid electrolyte membrane is released to separate the solid electrolyte membrane from the substrate, the solid electrolyte membrane is re-tensioned with a constant tensile force, and subsequently, the substrate is pressed by the re-tensioned solid electrolyte membrane when the imaginary component is smaller than the film-formable value in the determining.

Film formation method for metallic coating and film formation device for metallic coating

A method for manufacturing a wiring board in which the adhesion between an underlayer and a seed layer is improved. A diffusion layer in which an element forming the underlayer and an element forming a coating layer are mutually diffused is formed between the underlayer and a wiring portion of the coating layer by irradiating the wiring portion with a laser beam. A seed layer is formed by removing a portion excluding the wiring portion of the coating layer from the underlayer. A metal layer is formed by disposing a solid electrolyte membrane between an anode and the seed layer and applying voltage between the anode and the underlayer. An exposed portion without the seed layer of the underlayer is removed from an insulating substrate.

Method for manufacturing wiring board

A film formation apparatus for forming a metal film includes an anode, a solid electrolyte membrane disposed between the anode and a substrate that serves as a cathode, a power supply device that applies a voltage between the anode and the cathode, a solution container that contains a solution between the anode and the solid electrolyte membrane, the solution containing metal ions, and a pressure device that pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation apparatus includes an auxiliary cathode disposed in a peripheral area of the film formation region when the surface of the substrate is viewed in plain view, the auxiliary cathode having an electric potential lower than an electric potential of the anode.

First, a patterned substrate including an insulating substrate, a conductive seed layer, and an insulating layer is prepared. The seed layer is disposed on the insulating substrate, and consists of a first part having a predetermined pattern corresponding to the wiring pattern and a second part as a part other than the first part. The insulating layer is disposed on the second part of the seed layer. Subsequently, a metal layer having a thickness larger than a thickness of the insulating layer is formed on the first part of the seed layer. Here, a voltage is applied between an anode and the seed layer while a resin film containing a metal ion-containing solution is disposed between the patterned substrate and the anode and the resin film and the seed layer are brought into pressure contact. Subsequently, the insulating layer and the second part of the seed layer are removed.

A method for manufacturing a wiring board capable of improving adhesion between an underlayer and a seed layer. An electrically conductive underlayer is disposed on the surface of an insulating substrate and a seed layer containing metal is disposed on the surface of the underlayer to prepare a substrate with seed-layer. A diffusion layer in which elements forming the underlayer and seed layer are mutually diffused is formed between the underlayer and the seed layer, by irradiating the seed layer with a laser beam. A metal layer is formed on the surface of the seed layer by disposing a solid electrolyte membrane between an anode and the seed layer as a cathode and applying voltage between the anode and the underlayer. An exposed portion without the seed layer of the underlayer is removed from the insulating substrate.

The present disclosure provides a method for producing a wiring substrate. A seeded substrate is first prepared. The seeded substrate includes an insulation substrate, a conductive undercoat layer having a hydrophilic surface and provided on the insulation substrate, a conductive seed layer provided on a first region of the surface of the undercoat layer, the first region having a predetermined pattern, and a water-repellent layer on the second region of the surface of the undercoat layer, the second region being a region other than the first region. Subsequently, a metal layer is formed on the seed layer. A voltage is applied between the anode and the seed layer while a solid electrolyte membrane being disposed between the seeded substrate and the anode, and the solid electrolyte membrane and the seed layer being pressed into contact with each other. Thereafter, the water-repellent layer and the undercoat layer are etched.

Method for producing wiring substrate

A method for manufacturing a wiring board is capable of forming a metal layer included in a wiring layer to have an even thickness. The method includes preparing a conductive first underlayer on a surface of a substrate; a conductive second underlayer on a surface of the first underlayer; and a seed layer on a surface of the second underlayer and containing metal. The method disposes a solid electrolyte membrane between an anode and the seed layer as a cathode; applies voltage between the anode and the first underlayer to form a metal layer on the surface of the seed layer; removes an exposed portion of the second underlayer without the seed layer from the substrate; and removes an exposed portion of the first underlayer without the seed layer from the substrate. The first underlayer is a material having a higher electrical conductivity than that of the second underlayer.

Provided is a film formation device and a film formation method for a metallic coating that allow forming a metallic coating with a uniform film thickness. The film formation device of the present disclosure includes an anode, a solid electrolyte membrane, a power supply device, a solution container, and a pressure device. The solid electrolyte membrane is disposed between the anode and a substrate that serves as a cathode. The power supply device applies a voltage between the anode and the cathode. The solution container contains a solution between the anode and the solid electrolyte membrane. The solution contains metal ions. The pressure device pressurizes the solid electrolyte membrane to the cathode side with a fluid pressure of the solution. The film formation device further includes a shielding member disposed to surround an outer peripheral surface of the anode. The shielding member shields a line of electric force.

Film formation device and film formation method for metallic coating

The present disclosure provides a method for producing a wiring substrate. A seeded substrate including an insulation substrate, a conductive undercoat layer, and a conductive seed layer provided in a first region, in that order, is first prepared. An insulation layer covering the seed layer and the undercoat layer is then formed. Subsequently, the insulation layer is etched to expose a surface of the seed layer and form a remaining insulation layer covering the undercoat layer in the second region. Subsequently, a voltage is applied between an anode and the seed layer while a solid electrolyte membrane containing a metal ion-containing aqueous solution disposed between the seed layer and the anode and the membrane and the seed layer pressed into contact with each other, thereby a metal layer being formed on the surface of the seed layer. Thereafter, the remaining insulation layer is removed and the undercoat layer is etched.

A seeded substrate is first prepared. The seeded substrate includes an insulation substrate having a main surface composed of a first region and a second region other than the first region, and a conductive seed layer provided on the first region. Subsequently, a conductive layer is formed on at least the second region to obtain a first treated substrate. An insulation layer is then formed on the first treated substrate. The seed layer is then exposed. A metal layer is then formed on the surface of the seed layer. Here, a voltage is applied between the anode and the seed layer while a solid electrolyte membrane containing a metal ion-containing solution being disposed between the second treated substrate and the anode, and the solid electrolyte membrane and the seed layer being pressed into contact with each other. Thereafter, the insulation layer and the conductive layer are removed.

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Okazaki, Japan

Haruki Kondoh