Fuji Photo Film Company, Limited

Haruji Shinada

Akio Higashi

Kazuhiro Kawajiri

Hiroshi Tamura

Mitsuo Saitou

Yoshihiro Ono

Mitsuru Ikeda

A solid-state imaging device comprising an MOS scanning circuit over which is formed an array of photoconductive imaging elements. The imaging elements are separated by doped regions which create potential barriers against the movement of carriers of the photoconductive regions.

Solid-state imaging device with potential barriers between pixels

A solid-state imaging device in which the possibility of defect formation in a photoconductive layer is substantially eliminated by the use of a multi-layered structure. A photoconductive film unit and a transparent electrode are formed in that order on a semiconductor substrate in which is formed a scanning circuit composed of a plurality of picture elements defined by respective electrodes on the semiconductor substrate and the transparent electrode. The photoconductive film unit is composed of a polycrystalline silicon film and an amorphous silicon film that are disposed in that order on the semiconductor substrate.

Solid-state imaging device with polycrystalline film

A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

Process for fabricating solid-state imaging device

Solid state imaging device and process for fabricating the same

Growing community of inventors

Kanagawa, Japan

Haruji Shinada