Nikkiso Company Limited

Haruhito Sakai

Tetsuhiko Inazu

Noritaka Niwa

Cyril Pernot

A method of manufacturing a semiconductor light emitting element includes: forming an active layer made of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer made of an n-type AlGaN-based semiconductor material; removing a portion of each of the active layer and the n-type clad layer by dry etching to expose a portion of the n-type clad layer; forming a first metal layer including titanium (Ti) on an exposed surface of the n-type clad layer; forming a second metal layer including aluminum (Al) on the first metal layer; and forming an n-side electrode by annealing the first metal layer and the second metal layer at a temperature not lower than 560&#xb0; C. and not higher than 650&#xb0; C. A film density of the second metal layer before the annealing is lower than 2.7 g/cm.

Method of manufacturing semiconductor light emitting element

A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15&#xb0; and not more than 50&#xb0;.

Deep ultraviolet light emitting device

A semiconductor light emitting element includes: an n-type clad layer of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material; an active layer of an AlGaN-based semiconductor material provided on a first top surface of the n-type clad layer; and an n-side electrode provided on a second top surface of the n-type clad layer adjacent to the first top surface. The n-side electrode includes a first metal layer on the second top surface containing titanium (Ti) and a second metal layer on the first metal layer containing aluminum (Al). A root-mean-square roughness (Rq) of a top surface of the second metal layer is 5 nm or less.

Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

A method of manufacturing a semiconductor light emitting device includes: forming an active layer of an aluminum gallium nitride (AlGaN)-based semiconductor material on an n-type clad layer of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer; removing portions of the p-type semiconductor layer, the active layer, and the n-type clad layer so as to expose a partial region of the n-type clad layer; and forming an n-side electrode on the partial region of the n-type clad layer exposed. The removing includes first dry-etching performed by using both a reactive gas and an inert gas and second dry-etching performed after the first dry-etching by using a reactive gas.

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Hakusan, Japan

Haruhito Sakai