Denso Corporation

Haruhito Ichikawa

Shuhei Mitani

Yukihiro Wakasugi

Narumasa Soejima

Aiko Kaji

Tomohiro Mimura

Ippei Takahashi

Shinya Takei

A method for manufacturing a semiconductor device includes: forming an insulating film on a surface of a semiconductor layer of a semiconductor substrate; forming a contact hole in the insulating film; forming a conductor material on the insulating film to be in contact with the semiconductor layer through the contact hole; and patterning the conductor material using an alignment key included in the conductor material.

Method for manufacturing semiconductor device

A semiconductor wafer includes a silicon carbide wafer and an epitaxial layer, which is disposed at a surface of the silicon carbide wafer and made of silicon carbide. The semiconductor wafer satisfies a condition that a waviness value is equal to or smaller than 1 micrometer. The waviness value is a sum of an absolute value of a value &#x3b1; and an absolute value of a value &#x3b2;. A highest height among respective heights of a plurality of points with reference to a surface reference plane within a light exposure area is denoted as the value &#x3b1;. A lowest height among the respective heights of the points at the epitaxial layer with reference to the surface reference plane within the light exposure area is denoted as the value &#x3b2;.

Semiconductor wafer including silicon carbide wafer and method for manufacturing silicon carbide semiconductor device

Growing community of inventors

Kariya, Japan

Haruhito Ichikawa