Olympus Corporation

Bandai Co., Ltd.

Haruhisa Saito

Hiroki Matsui

Shinnosuke Terai

Hirotaka Hatayama

Yoshitaka Tadaki

Yoshiaki Takemoto

Hiroshi Kikuchi

Yuichi Gomi

Mitsuhiro Tsukimura

Naohiro Takazawa

An information processing system includes an information bearing medium and an information reading unit. The information bearing medium has a two-dimensional array of unit data zones. Marks are provided on some of the unit data zones so as to form a digital code. Mark patterns of any two Y-directional adjacent unit data zone strings based on the arrangement of marks in an X-direction differ from each other. The information reading unit generates a data string on the basis of a unit signal formed from a plurality of signals output from a group of detection units that detect the marks in synchronization and recognizes the digital code of the information bearing medium on the basis of a group of the data strings sequentially obtained from the array of the unit data zones.

Information bearing medium and information processing system

A solid-state imaging device has a first substrate, a second substrate, and a third substrate. The first substrate has a plurality of first photoelectric conversion elements. The second substrate has a plurality of first through electrodes. The plurality of first photoelectric conversion elements are disposed in a pixel area. The plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area.

Solid-state imaging device and imaging apparatus

A first surface of a first substrate included in a semiconductor device includes a first area in which a plurality of first connecting portions are disposed and a second area in which a plurality of second connecting portions are disposed. A second surface of a second substrate included in the semiconductor device includes a third area in which the plurality of first connecting portions are disposed and a fourth area in which the plurality of second connecting portions are disposed. The second area surrounds the first area on the first surface. The fourth area surrounds the third area on the second surface. A height of the second base electrode in a thickness direction of the first substrate is greater than a height of the first base electrode in the thickness direction.

Semiconductor device

A semiconductor device having a stacked structure formed by stacking a thinned first silicon substrate and a second silicon substrate supporting the first silicon substrate, wherein the first silicon substrate includes a first surface with a crystal surface orientation of (100) or (110) and a second surface opposite to the first surface, the second silicon substrate includes a third surface and a fourth surface that is opposite to the third surface and from which a silicon surface with a crystal surface orientation (111) is exposed, and wherein the semiconductor device is formed by etching silicon with a predetermined thickness in a direction from the first surface toward the second surface to make the first silicon substrate to be thinned, after bonding the first silicon substrate and the second silicon substrate in a state where the second surface and the third surface facing the second surface are bonded with each other.

Image pickup device and manufacturing method for image pickup device by stacking/bonding of crystalline silicon substrates

A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

Solid-state imaging device, imaging apparatus, substrate, semiconductor device and method of manufacturing the solid-state imaging device

A semiconductor device manufacturing method includes a wafer stack manufacturing process and a dicing process. The wafer stack manufacturing process includes: a first wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature higher than a glass transition point of the resin film, manufacturing first holes extending from a surface of the resin film to wirings of the circuits, and providing electrodes electrically connected to the wirings in the first holes to form a first wafer; a second wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature lower than a glass transition point of the resin film, manufacturing second holes extending from a surface of the resin film to wirings of the circuits, and providing the electrodes electrically connected to the wirings in the second holes to form a second wafer; and a wafer bonding process.

Semiconductor device, imaging device and semiconductor device manufacturing method

A substrate may include: a base material having a predetermined thickness; an electrode section formed on one side surface in a thickness direction of the base material, and having a plurality of electrodes; and a concave section formed on at least a part of the surface on which the electrode section is formed, on the base material.

A semiconductor wafer may include: a disk-shaped wafer body made of silicon; and an identification trench section having at least one trench and provided at a periphery section of the wafer body, wherein the trench is opened in the periphery of the wafer body, and has a depth less than a thickness of the wafer body.

Growing community of inventors

Tokyo, Japan

Haruhisa Saito