Nikkiso Company Limited

Haruhisa Aida

Tetsuhiko Inazu

Noritaka Niwa

A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a p-side contact electrode that includes a Rh layer in contact with an upper surface of the p-type semiconductor layer; and a p-side current diffusion layer that is in contact with an upper surface and a side surface of the p-side contact electrode and includes a TiN layer, a Ti layer, a Rh layer, and a TiN layer stacked successively. A film density of the Rh layer included in the p-side contact electrode is larger than a film density of the Rh layer included in the p-side current diffusion layer.

Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element

A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer provided on the n-type semiconductor layer and made of an AlGaN-based semiconductor material; a p-type semiconductor layer provided on the active layer; a p-side contact electrode that includes a Rh layer in contact with an upper surface of the p-type semiconductor layer; a p-side electrode covering layer that is in contact with an upper surface and a side surface of the p-side contact electrode and includes a Ti layer, a Rh layer, and a TiN layer stacked successively; a dielectric covering layer that has a connection opening provided on the p-side electrode covering layer and covers the p-side electrode covering layer in a portion different from the connection opening; and a p-side current diffusion layer that connects to the p-side electrode covering layer in the connection opening.

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Ishikawa, Japan

Haruhisa Aida