Nec Corporation

Haruhiko Ono

Nobuyuki Ikarashi

Hirohito Watanabe

Takeshi Okazawa

Hiroki Shirai

Ichiro Honma

Taishi Kubota

Heiji Watanabe

Koji Watanabe

Toru Tatsumi

Tohru Mogami

Mitsuhiro Togo

Kazutoshi Shiba

Toyoji Yamamoto

A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is lower in a center portion in the film thickness direction than in an upper portion and in a lower portion.

Semiconductor device with high dielectric constant insulating film and manufacturing method for the same

Semiconductor device having high-permittivity insulation film and production method therefor

In the case where a Ta O thin film having double bond Ta&boxH;O is employed for a capacitative insulating film, Rapid Thermal Anneal in oxygen, and UV/O treatment are executed at suitable temperature and in suitable time. Whether or not absorption peak which appears in 2340 cm exists and whether it is large or small are monitored by measuring a transmission infrared absorption spectrum of a Ta O thin film with Fourier Transform Infrared Spectroscopy. In the case where a Ta O thin film, in which an abundance ratio of oxygen in a three coordinate bonding state is large, is employed for a capacitative insulating film, an intensity ratio of each double peak which appears in 510 cm and 570 cm is measured as well, so that the film whose ratio (510/570) is larger than another one is used as Man character to improve quality of a film. Consequently, it is made possible to provide a manufacturing method of a semiconductor device in which a Ta O thin film, which has high permittivity and low leak current, is employed for a capacitative insulating film.

Semiconductor device having Ta2O5 thin film

A MIS transistor has a gate insulating film made of silicon oxynitride and having a specific dielectric constant which is larger than the expected specific dielectric constant calculated based on a weighted average of the specific dielectric constants based on the weight ratio of the silicon oxide and the silicon nitride contained in the silicon oxynitride film. The gate insulating film having a smaller thickness prevents impurities in the overlying gate electrode from penetrating through the gate insulating film to degrade the silicon substrate.

Semiconductor device including a MIS transistor

There are disclosed a nonvolatile semiconductor memory device, which is capable of maintaining a high capacitance ratio even when a memory cell is formed in a micronized size without increasing the number of manufacturing steps, and its manufacturing method. In a flash memory having buried diffusion layer type cells, a source region and drain regions and are formed in self alignment with a polycrystalline film pattern which has a polycrystalline silicon film having projecting and recessing parts in its upper surface.

Nonvolatile semiconductor memory device and manufacturing method of the

There is disclosed a nonvolatile semiconductor memory device, which is capable of maintaining a high capacitance ratio even when a memory cell is formed in a micronized size without increasing the number of manufacturing steps. In a flash memory having buried diffusion layer type cells, a source region and drain regions and are formed in self alignment with a polycrystalline film pattern which has a polycrystalline silicon film having projecting and recessing parts in its upper surface.

Growing community of inventors

Tokyo, Japan

Haruhiko Ono