Kabushiki Kaisha Toshiba

Haruhiko Okazaki

Koichi Nitta

Masayuki Ishikawa

Hideto Sugawara

Satoshi Komoto

Kuniaki Konno

Tadashi Umeji

Yukio Watanabe

Chisato Furukawa

Tokuhiko Matsunaga

Chiharu Nozaki

Shinya Nunoue

Takayoshi Fujii

Hidetoshi Fujimoto

Genichi Hatakoshi

Kazuhiro Inoue

Masahiro Yamamoto

Toshitake Kitagawa

Toshihiro Kuroki

Hiroyuki Nakashima

According to one embodiment, a light emitting device includes a base, a light emitting element, and a fluorescent body-containing layer. The light emitting element is installed on the base, has an upper surface and a lower surface, and includes a light emitting unit on the upper surface. The fluorescent body-containing layer is provided on the light emitting element and has a lower surface having an area smaller than an area of the light emitting unit and an upper surface having an area larger than an area of the light emitting unit.

Light emitting device

In at least one aspect, a semiconductor light emitting device may include a first lead, a second lead provided being apart from the first lead, a semiconductor light emitting element provided on the first lead, a wiring electrically connecting the semiconductor light emitting element and the second lead, a first resin being optically transparent to light from the semiconductor light emitting element, the first resin covering the semiconductor light emitting element, and a second resin provided on the first resin, the first lead and the second lead, and being optically transparent to light from the semiconductor light emitting element, wherein a part of the first lead which is covered with the second resin is symmetric with respect to a vertical line passing through the semiconductor light emitting element in a cross-sectional view cut along a plane, the plane passing the semiconductor light emitting element and being parallel with a direction to which the first lead is extended.

Semiconductor light emitting device with first and second leads

An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Image display device and light emission device

Semiconductor light-emitting device with wavelength change material

An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

Light emitting element

Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element

A method of manufacturing an LED forms an InGaN active layer on a substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes a nickel layer for forming an ohmic contact with a p-GaN layer, a molybdenum having a barrier function of preventing diffusion of impurities, an aluminum layer as a high-reflection electrode, a titanium layer having a barrier function, and a gold layer for improving the contact with a submount on a lead frame. Forming a p-side electrode with this five-layered structure realizes an ohmic contact and high reflectance at the same time.

Semiconductor device having a light emitting element

Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.

Semiconductor light-emitting element

Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer containing a p-type dopant like magnesium (Mg) is deposited near the surface of a p-type GaN layer to diffuse it there, and a p-side electrode is made on the p-type GaN layer after removing the deposited layer. This results in ensuring ohmic contact with the p-side electrode, preventing exfoliation of the electrode and improving the reliability.

Semiconductor light emitting device and its manufacturing method

Growing community of inventors

Yokohama, Japan

Haruhiko Okazaki