Kabushiki Kaisha Toshiba

Haruhiko Nomura

Makoto Hasegawa

Atsuo Sanda

A plasma etching apparatus has a first load-lock chamber, a process chamber connected to the first load-lock chamber through a gate valve, and a second load-lock chamber connected to the process chamber through another gate valve. A first processing section is provided to the process chamber to etch a wafer. A second processing section is provided to the second load-lock chamber to remove a reaction product generated during etching from the wafer. In the second processing section, an ultrasonic wave is applied to the wafer, thereby removing the reaction product from the wafer.

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Yokkaichi, Japan

Haruhiko Nomura