Mitsubishi Electric Corporation

Hirose Electric Company, Ltd.

Haruhiko Murakami

Rei Yoneyama

Keisuke Eguchi

Shiori Uota

Yoshitaka Kimura

Takahiro Inoue

Ryo Goto

Masayuki Ando

Akihiko Yamashita

Koichiro Noguchi

Motoki Imanishi

Hiroyuki Okabe

Takami Otsuki

Shoichi Mizusawa

Seiji Okamura

Takayuki Shirahama

An object of the present invention is to provide a semiconductor device suppressing a ringing. A semiconductor device in an embodiment 1 includes an IGBT, an SBD connected to the IGBT in series, a PND connected to the IGBT in series and parallelly connected to the SBD, and an output electrode connected between the IGBT and the SBD and between the IGBT and the PND. An anode electrode of the PND is connected to the output electrode by the wiring via an anode electrode of the SBD.

Semiconductor device

An electric connector for a circuit board includes a housing including a reception part, a plurality of metal members, and a movable member that is movable relative to the housing. The movable member includes a movement restricted part. The metal members include a rolled surface that is parallel to a connector width direction and an exposed part that is exposed from the housing. The rolled surface of the exposed part faces the movement restricted part and the exposed part includes a movement restricting part that restricts movement of the movement restricted part. The connector includes a housing part for housing the movement restricted part and the movement restricting part.

Electric connector for circuit board, and producing method for electric connector for circuit board

A driving device for a semiconductor element includes: a plurality of detection circuits that detect different types of abnormalities of the semiconductor element; a logic circuit that generates an error signal when at least one of the detection circuits detects an abnormality; an alarm signal generating circuit that receives the error signal and generates an alarm signal made of one or a plurality of pulses, the alarm signal having a different pulse width for each of the detection circuits that has detected an abnormality; and a protection operation determining circuit that determines whether or not a protection function of the semiconductor element is operating based on the error signal and the alarm signal, and shuts off input of a drive signal to the semiconductor element when it is determined that the protection function is operating.

Driving device for semiconductor element

First and second switching regions include first and second gate electrodes respectively. Channel currents of the first and second switching regions are controlled according to electric charge amounts supplied by control signals input to the first and second gate electrodes respectively. The second switching region is connected in parallel with the first switching region. A control section outputs a first control signal for turning-on the first switching region to the first gate electrode and a second control signal for turning-on the second switching region to the second gate electrode. The control section stops outputting the second control signal after a first predetermined period elapses from a start of outputting the first and second control signals, and outputs the second control signal after a second predetermined period elapses from a stop of outputting the second control signal.

Semiconductor device having first and second switching regions respectively controlled by first and second control signals output by a controller

A semiconductor module includes an insulating substrate including an insulating layer, a first metal pattern formed on an upper surface of the insulating layer, and a second metal pattern formed on a lower surface of the insulating layer, a semiconductor chip that is formed of SiC and is fixed to the first metal pattern with a first metal joining member, and a heat sink that is fixed to the second metal pattern with a second metal joining member, wherein the semiconductor chip has a thickness that is equal to or larger than 0.25 mm and equal to or smaller than 0.35 mm, and the insulating layer has a thickness that is larger than the thickness of the semiconductor chip by a factor of 2.66 inclusive to 5 inclusive.

Semiconductor module and power converter

A high-side switching element is provided between a main output terminal having an intermediate potential and a high-side terminal. A signal transmission circuit includes a first point, a second point, a signal switching element, and a diode. The intermediate potential is applied to the first point. A referred potential between the low-side potential and the high-side potential is applied to the second point. The signal switching element has a first end connected to the first point and a second end, and is switched in accordance with a conversion signal. The diode is provided between the second point and the second end of the signal switching element and has a direction with which a forward current can flow by a voltage between the first point and the second point in a case where the intermediate potential is the low-side potential.

A semiconductor device includes a base plate, a case, a power semiconductor element, and a control semiconductor element. Case is provided on base plate. Power semiconductor element is disposed over base plate in case. Control semiconductor element is disposed in case. Case has an opening formed therein opposite to base plate. The semiconductor device further includes a cover to close opening in case. Cover has a hole formed in at least a portion of a region overlapping control semiconductor element in plan view.

Semiconductor device having improved heat dissipation efficiency

An electrical connector for connecting a flat conductive member includes a plurality of terminals formed of a flat metal plate arranged on a housing in a direction perpendicular to a plate direction. Each of the terminals has a contact portion disposed at a position for receiving the flat conductive member to be inserted into a receptacle portion of the housing. A metal member having an engaging portion is attached to the housing for engaging an engagement portion of the flat conductive member, so that the flat conductive member does not come off backward. A pressing member is supported on at least one of the housing and the terminals to be rotatable. The metal member further includes an attaching portion attached to the housing. The metal member is attached to the housing such that the attaching portion is situated in parallel to a plate surface of the terminals.

Electrical connector

An electrical connector is connected to a flat conductive member having a connecting portion. The electrical connector includes a housing formed of an insulating material and having a receptacle space for receiving the flat conductive member; a terminal arranged in the housing along a first direction; a metal member disposed in the housing, said metal member including an attaching portion attached to the housing, an arm portion extending from the attaching portion, and an extending portion extending inward from the arm portion; and a pressing member supported on one of the housing, the terminal, and the metal member to be rotatable for pressing a contact portion of the terminal against the connecting portion. The extending portion extends close to the flat conductive member and overlaps with the flat conductive member when the flat conductive member is inserted into the receptacle space.

Growing community of inventors

Tokyo, Japan

Haruhiko Murakami