Tokyo Electron Limited

Haruhiko Furuya

Taro Ikeda

Shigeru Nakajima

Yuichiro Morozumi

Katsushige Harada

Tomonori Fujiwara

Dong-Kyun Choi

Kazuhide Hasebe

Jun Ogawa

Atsushi Endo

Mitsuhiro Tachibana

Eiki Kamata

Kentaro Oshimo

Yu Wamura

Tadashi Enomoto

Takahito Umehara

Masahiko Kaminishi

Kazuo Yabe

Hiroshi Kondo

Yoshitaka Enoki

Yoshinobu Ise

Hirotake Fujita

A plasma processing apparatus includes: a processing container in which a stage is accommodated and including an opening formed above the stage; a lid member for sealing the opening and including: at least one through-hole formed in a region facing the stage and in which a radiation part for radiating microwaves is arranged; a protruded portion formed on a first surface facing an interior of the processing container to protrude toward the interior of the processing container along an edge of the opening; a flow path formed inside the protruded portion; gas holes formed on the first surface to communicate with the flow path; and a supply port formed on a second surface facing an exterior of the processing container to communicate with the flow path; and a remote plasma unit connected to the supply port and for plasmarizing a cleaning gas and supply the same to the supply port.

Plasma processing apparatus and lid member

A plasma processing apparatus includes: a chamber; a stage provided in the chamber; a microwave transmission window provided on a wall surface of the chamber; a microwave supply configured to supply microwaves into the chamber via the microwave transmission window; a shower plate configured to partition an interior of the chamber into a plasma generation space, which is a region where the microwave transmission window is disposed, and a processing space, which is a region where the stage is disposed; and a protrusion protruding from the shower plate into the plasma generation space and including a conductor in at least a portion of the protrusion.

Plasma processing apparatus and plasma processing method

There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.

A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.

Substrate processing apparatus and film deposition apparatus

A raw material supplying device includes a raw material supplying pipe including a vertically extending rising pipe. The device further includes a first raw material discharging pipe which is provided to branch from the lower end of the rising pipe. The device further includes a cleaning fluid supplying pipe configured to supply one of purge gas and cleaning solution in order to extrude and discharge liquid raw material in the raw material supplying pipe to the first raw material discharging pipe. The device further includes a first raw material supplying valve and a first raw material discharging valve which are respectively provided in the side of the repository and the first raw material discharging pipe other than a connection portion of the raw material supplying pipe with the first raw material discharging pipe. The device further includes a cleaning fluid supplying valve provided in the cleaning fluid supplying pipe.

Raw material supplying device and film forming apparatus

A film deposition method includes an adsorption step of adsorbing a first reaction gas onto a substrate by supplying the first reaction gas from a first gas supplying portion for a predetermined period without supplying a reaction gas from a second gas supplying portion while separating a first process area and a second process area by supplying a separation gas from a separation gas supplying portion and rotating a turntable; and a reaction step of having the first reaction gas adsorbed onto the substrate react with a second reaction gas by supplying the second reaction gas from the second gas supplying portion for a predetermined period without supplying a reaction gas from the first gas supplying portion while separating the first process area and the second process area by supplying the separation gas from the separation gas supplying portion and rotating the turntable.

Apparatus and method of forming thin film including adsorption step and reaction step

A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.

Film formation method for forming hafnium oxide film

A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is performed while supplying a cleaning gas containing hydrogen fluoride into the reaction chamber, and forming a first atmosphere within the reaction chamber, which allows water to be present as a liquid film.

Film formation apparatus and method of using the same

In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.

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Yamanashi, Japan

Haruhiko Furuya