Kabushiki Kaisha Toshiba

Other

Toshiba Energy Systems & Solutions Corporation

Haruhi Oooka

Hideyuki Nakao

Takeshi Gotanda

Yasushi Shinjo

Kenji Todori

Mitsunaga Saito

Shigehiko Mori

Akihiko Ono

Masahiro Hosoya

Koichi Ishii

Takashi Miyazaki

Rei Hasegawa

Hajime Yamaguchi

Satoshi Takayama

Hitoshi Nagato

Atsuko Iida

Hiroki Iwanaga

Michihiko Inaba

Kenji Fujinaga

Akihiro Matsui

Takeshi Watanabe

Fumihiko Aiga

Rumiko Hayase

Hitoshi Yagi

Shuichi Uchikoga

A photoelectric conversion material dispersion liquid of an embodiment includes: perovskite crystal particles having a composition represented as ABX, where A is a monovalent cation of an amine compound, B is a divalent cation of a metal element, and X is a monovalent anion of a halogen element, and having an average particle diameter of not less than 10 nm nor more than 10000 nm; and a dispersion medium which is composed of a poor solvent to the perovskite crystal particles, and in which the perovskite crystal particles are dispersed.

Photoelectric conversion material dispersion liquid and producing method thereof, producing method and producing apparatus of photoelectric conversion film, and photoelectric conversion device

A photoelectric conversion element includes: a first photoelectric conversion layer including: a bottom electrode; a photoelectric conversion layer; and a top electrode; and a second photoelectric conversion part including: a bottom electrode; a photoelectric conversion part; and a top electrode. A conductive layer is formed on the bottom electrode. The top electrode and the bottom electrode are electrically connected by a conductive portion and the conductive layer. The conductive portion is formed of a part of the top electrode filled in a first groove that makes a surface of the conductive layer exposed and separates a photoelectric conversion layer and a photoelectric conversion layer from each other. The top electrodes are physically separated by a second groove provided to make a step surface of a stepped portion provided in the photoelectric conversion layer exposed and have a bottom surface thereof overlap the surface of the conductive layer.

Photoelectric conversion element and method of manufacturing thereof

A method for manufacturing a photoelectric conversion device, that includes: forming a laminate structure of a substrate, a transparent electrode, an active layer produced by wet-coating, and a counter electrode, stacked in this order; and thereafter forming a cavity by: (a) pressing an adhesive material just against a defect formed on the surface of said counter electrode, and then peeling off said adhesive material together with said defect and the peripheral part thereof; or (b) sucking a defect formed on the surface of said counter electrode, so as to remove said defect and the peripheral part thereof, where said cavity penetrates through the counter electrode and unreached to the transparent electrode.

Photoelectric conversion device and manufacturing method and apparatus thereof

A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode provided on a transparent substrate, a first active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second active layer, and a second counter electrode. A conductive layer containing noble metal as a main component is formed on a partial region of the second transparent electrode, and a fine particle layer having a stack of fine particles is formed on the conductive layer. The first counter electrode and the second transparent electrode are electrically connected by a connection part having a scribe groove penetrating through the fine particle layer from the second active layer and exposing a surface of the conductive layer, and a conductive layer having a part of the first counter electrode filled in the scribe groove.

Photoelectric conversion device and method of manufacturing the same

The present embodiments provide a flexible, lightweight and highly efficient photoelectric conversion device and further provide a manufacturing method thereof. The photoelectric conversion device according to the embodiment comprises a laminate structure of a substrate, an ITO electrode, a photoelectric conversion layer and a counter electrode. When subjected to surface X-ray diffraction analysis, the ITO electrode shows an X-ray diffraction profile characterized in that the peak at a diffraction peak position in the range of 2&#x3b8;=30.6&#xb1;0.5&#xb0; has a half-width of 1.0&#xb0; or less. The ITO electrode in the device can be formed by forming an amorphous-phase ITO film on the substrate and then by subjecting the film to annealing treatment at a temperature of 200&#xb0; or less.

Photoelectric conversion device and method for manufacturing the same

The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.

Method and apparatus for manufacturing semiconductor elements

A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200&#xb0; C.R&#x2014;(CH)&#x2014;R&#x2003;&#x2003;(1)

The present embodiments provide a highly durable semiconductor element capable of generating electricity or emitting light with high efficiency, and further provide a manufacturing method thereof. The semiconductor element according to the embodiment comprises a first electrode, a second electrode, an active layer and a substrate, and is characterized in that the active layer contains crystals oriented anisotropically. For manufacturing the element, the active layer is produced by the steps of: applying a coating solution containing precursor compounds of the active layer and an organic solvent capable of dissolving the precursor compounds, to form a coating film; and then growing the crystals in a specific direction parallel to the surface of the coating film.

Semiconductor elements and method for manufacturing the same

A photoelectric conversion device of an embodiment includes: a first photoelectric conversion part including a first transparent electrode, a first organic active layer, and a first counter electrode; and a second photoelectric conversion part including a second transparent electrode, a second organic active layer, and a second counter electrode, which are provided on a transparent substrate. A conductive layer is formed on a partial region, of the second transparent electrode, which is adjacent to the first transparent electrode. The first counter electrode and the second transparent electrode are electrically connected by a connection part including a groove formed from a surface of the second organic active layer to reach an inside of the conductive layer and a part of the first counter electrode filled in the groove.

Photoelectric conversion device and manufacturing method thereof

A solar cell module according to an embodiment includes: a light transmissive first substrate; a second substrate; at least one cell array disposed between the first substrate and the second substrate, the cell array including a plurality of cells arranged, each of the cells including a first electrode disposed on the first substrate, an organic photoelectric conversion film disposed on the first electrode, and a second electrode disposed on the organic photoelectric conversion film; a plurality of light transmissive partition walls disposed at portions on the first substrate, the portions being located between adjacent ones of the cells and at both end portions of the cell array; and a first resin film disposed between the second substrate and each of the cells between adjacent ones of the partition walls, the cells being connected in series.

Solar cell module

A photoelectric conversion element includes: a substrate having an element formation surface; a first electrode provided on the element formation surface and extending along one direction of the element formation surface up to an end portion of the element formation surface; a photoelectric conversion layer provided above the first electrode and including a first region having a first thickness and a second region extending from an end portion of the first region up to an end portion of the first electrode and having a second thickness larger than the first thickness; and a second electrode provided above the first and second regions and extending up to an end portion of the photoelectric conversion layer.

Photoelectric conversion element and manufacturing method of photoelectric conversion element

In accordance with one embodiment, there is provided a photovoltaic cell module including a plurality of photovoltaic cell structures including a hole transport layer and an electron transport layer which are disposed on a common photoelectric conversion layer so that electromotive force polarities are alternately different, wherein the photovoltaic cell structures are electrically connected in series.

Photovoltaic cell module

A solar cell includes a substrate and a stacked body. The substrate includes an upper surface. The stacked body includes a lower electrode, a photoelectric conversion film, and an upper electrode. The lower electrode is provided on the upper surface. The photoelectric conversion film is provided on the lower electrode. The upper electrode is provided on the photoelectric conversion film. The stacked body includes a first region and a second region. The first region includes a foreign matter between the lower electrode and the photoelectric conversion film. The second region is without the foreign matter. A distance between an end of the foreign matter in a first direction parallel with the upper surface and the upper electrode in a second direction intersecting the upper surface is greater than a distance in the second direction between the lower electrode and the upper electrode in the second region.

Growing community of inventors

Kawasaki, Japan

Haruhi Oooka